RF/DC Magnetron Sputtering System
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RF/DC Magnetron Sputtering System: ToronSputter™ RFDC
Multi-Target Deposition and Power Supplies
The ToronSputter™ RFDC is a magnetron sputtering system built for multi-target thin film deposition. It accommodates targets up to 6 inches in diameter and supports configurations of 1 to 4 sources. The RF power supply (13.6 MHz, 300 to 1200 W) is suited to insulating and reactive targets, while the DC power supply (600 V, 1.7 A) serves metallic film deposition.
Chamber, Vacuum Performance, and Automation
The SS304 chamber, available in sizes from 30 to 60 cm, reaches a base pressure of 10⁻⁷ Torr. A working vacuum of 10⁻⁶ Torr is achieved within 30 minutes. Fully automated LabVIEW control and a 1.5-hour process cycle deliver consistent daily throughput. Wide-range vacuum control (1000 to 10⁻⁹ Torr) and chamber baking at 120 °C help maintain base pressure and a clean process environment.
Gas Control and Pressure Regulation
Three-channel MFM gas control with real-time display handles Ar, N₂, O₂, He, CH₄, and H₂, supporting both inert and reactive sputtering across a 1 to 100 mTorr range. Throttle, vent, and isolation valves allow precise pressure setting. During reactive processes, a capacitance manometer adds a further plasma pressure measurement.
Substrate Preparation
Substrates are prepared before deposition using PID-controlled heating from 50 to 600 °C and rotation from 3 to 30 rpm. RF plasma cleaning through substrate biasing completes the preparation step.
Thickness Control and Multi-Layer Sequences
A dual-channel thickness controller supports 1 to 4 QCMs with 0.1 Å/s resolution. Managed through LabVIEW automation, it runs multi-layer deposition sequences fully automatically.
Large-Substrate Capability and Production Coating
The extended target range, up to 6 inches, allows deposition on larger substrates and increases throughput for production coating programs.
Footprint, Ports, and Process Support
The system occupies a 75×120 cm footprint and sits on lockable wheels, so it passes through standard doorways. Standard 1-inch, QF, CF, and ISO ports provide flexible feedthrough and source configurations. Automatic start-stop closed-loop water cooling and internal baking up to 120 °C complete the process support system.
RF/DC Magnetron Sputtering System: ToronSputter™ RFDC Applications
Where the ToronSputter™ RFDC Fits
The ToronSputter™ RFDC is designed for research and production PVD facilities that need large-target magnetron sputtering with both RF and DC source options, reactive gas capability, and automated multi-layer deposition. Its 6-inch target option makes the system a strong match for larger substrate programs and higher-throughput coating work.
Key Application Areas
- Semiconductor and Microelectronics Fabrication: DC sputtering lays down metallic contacts, seed layers, and barrier films, while RF sputtering forms oxide and nitride dielectric layers. Multi-source runs can be performed on 6-inch wafer substrates.
- Optical Coating Production: Reactive RF sputtering produces TiO₂, SiO₂, and multi-layer optical stacks. Capacitance manometer pressure control supports stoichiometric accuracy across extended coating runs.
- Hard Coating and Tool Surface Engineering: Reactive sputtering of TiN, CrN, and TiAlN coats tooling and mechanical components, and the 6-inch target capacity supports higher deposition rates.
- Transparent Conductive Oxide Deposition: RF sputtering of ITO, AZO, and other TCO films serves solar cell, display panel, and flexible electronics applications that call for uniform large-area coverage.
- Materials Science and Alloy Film Research: Multi-target and co-sputtered alloy, compound, and mixed oxide films enable composition-structure-property studies and new materials development.
- Energy Device and Photovoltaic Research: The system sputters metallic back contacts, oxide buffer layers, and TCO front contacts for thin-film solar cell and energy device research programs.
- Academic and University Multi-Source Research: A flexible RF/DC platform supports multi-layer thin film studies across conducting, semiconducting, and insulating materials, all within a single automated system.
RF/DC Magnetron Sputtering System: ToronSputter™ RFDC Key Features
The ToronSputter™ RFDC combines RF and DC magnetron sputtering in a multi-target, high-vacuum platform. It supports 6-inch targets and features three-channel MFM gas control, LabVIEW-driven layer automation, and capacitance manometer monitoring of plasma pressure.
Key Features
- 1 to 4 DC/RF Sources with 6-Inch Target Capability: The source layout is configurable and accepts 1", 2", 3", 4", and 6" target diameters. It suits single-target, co-sputtered, and sequenced multi-layer deposition programs.
- RF Power Supply (13.6 MHz, 300 to 1200 W): This supply covers the RF power range needed for sputtering insulating targets and for reactive oxide and nitride deposition.
- DC Power Supply (600 V, 1.7 A): The DC supply sputters conductive metallic targets with a controlled deposition rate.
- 3-Channel MFM Gas Control (Ar, N₂, O₂, He, CH₄, H₂): Electronic control and real-time display for three independent gas channels support both inert and reactive sputtering processes.
- Additional Capacitance Manometer for Plasma Pressure: A dedicated gauge, independent of the main vacuum gauge, measures plasma pressure precisely during reactive sputtering.
- Throttle, Vent, and Isolation Valves with 1 to 100 mTorr Precision: These valves allow precise working pressure adjustment for reactive process control and stable plasma conditions.
- 10⁻⁷ Torr Base Pressure, 10⁻⁶ Torr in 30 Minutes: A turbomolecular and mechanical pump combination delivers this performance. Cryo and dry pumps are available as options.
- Wide-Range Vacuum Control (1000 to 10⁻⁹ Torr): Integrated vacuum measurement and control span atmospheric pressure to deep vacuum for every process mode.
- LabVIEW-Based Layer-by-Layer Deposition Control: PC-controlled automation manages each deposition layer independently, so complex multi-layer sequences run without operator intervention.
- 0.1 Å/s Dual-Channel Thickness Measurement with 1 to 4 QCMs: Scalable multi-sensor thickness and rate monitoring supports up to four simultaneous QCM channels.
- 50 to 600 °C PID Substrate Heating: PID-controlled substrate temperature across a wide process range supports film crystallinity and adhesion.
- 3 to 30 rpm Sample Rotation: Adjustable substrate rotation promotes uniform film thickness across the substrate surface.
- Sample Plasma Cleaning Unit (RF via Substrate Biasing): In-situ RF plasma cleaning removes native surface oxides before deposition without breaking vacuum.
- Automatic Start-Stop Closed-Loop Water Cooling: Thermal management switches cooling on and off according to system state, protecting the sources and chamber throughout operation.
- Vacuum Hold with Isolation Valve: The main chamber remains under vacuum when idle, which shortens pump-down time between successive experiments.
- SS304 Chamber (30 to 60 cm, Prismatic or Cylindrical): Clean, electro-polished inner surfaces are available in multiple box sizes, with an SS304 liner.
- Standard 1-inch, QF, CF, and ISO Feedthrough Ports: Configurable port selection offers flexible integration of feedthroughs, gauges, and process gas.
- Internal Lighting and 120 °C Baking Capability: Internal lighting enables chamber inspection, and baking supports conditioning and moisture removal.
- Front Viewing Window with Rotatable Shutter: A direct line of sight allows process monitoring, while the rotatable shutter enables precise deposition timing.
- Fully Automatic Computer Control with Touch Screen Panel: A touch screen and real-time LCD displays handle all system operations automatically.
- 1.5-Hour Experiment Cycle Time: Fast pump-down and a short process cycle support multiple runs per day.
- 75×120 cm Mobile Platform on Lockable Wheels: The compact footprint passes through standard doorways and can be repositioned within the facility.
- Two-Year Warranty for Design, Materials, and Workmanship: Coverage for system components, design, and manufacturing quality extends to two years, double the standard one-year term.
Theory and Method
Principles of Magnetron Sputtering
In magnetron sputtering, a process gas is ionized and the resulting ions strike a cathode target. The impact ejects atoms, which then condense on the substrate and build up a thin film. A magnetic field holds the plasma close to the target face, raising ion density and sputtering yield even at low working pressures. A 600 V DC supply sputters conductive targets, whereas 13.6 MHz RF power dissipates the charge that accumulates on insulating and oxide targets. The 6-inch target format adds source material capacity and widens the usable deposition area for larger substrates.
Multi-Target, Co-Sputtering, and Reactive Deposition
A configuration of one to four sources permits sequential deposition within a single pump-down cycle, which limits contamination between material layers. Co-sputtering from sources powered at the same time produces composition-graded and alloy films without separate deposition steps. For reactive sputtering, N₂ or O₂ enters through MFM-controlled inputs while a metallic target is sputtered, forming nitride or oxide films without the need for compound targets. Throttle valve and capacitance manometer control keep plasma pressure stable across the 1 to 100 mTorr reactive process window.
Automation and Substrate Preparation
LabVIEW automation manages the entire layer sequence, including shutter timing, power levels, and gas flow at each step, with no operator intervention between layers. RF plasma cleaning through substrate biasing removes native oxides before deposition and improves adhesion at the film-substrate interface. PID substrate heating from 50 to 600 °C encourages film crystallinity and surface diffusion during growth. Between runs, the isolation valve keeps the main chamber under vacuum, removing pump-down overhead for successive depositions.
RF/DC Magnetron Sputtering System - ToronSputter™ RFDC Technical Specifications
| Parameter | Specification |
|---|---|
| RF Power Supply | 13.6 MHz, 300 to 1200 W |
| DC Power Supply | 600 V DC, 1.7 A |
| Number of Sputtering Sources | 1 to 4 (DC/RF) |
| Target Diameters | 1", 2", 3", 4", 6" |
| Base Pressure | 10⁻⁷ Torr |
| Working Vacuum (Pump-Down Time) | 10⁻⁶ Torr in 30 minutes |
| Vacuum Control Range | 1000 to 10⁻⁹ Torr |
| Pump Configuration | Turbomolecular + Mechanical (cryo and dry pump as options) |
| Sputter Working Pressure Range | 1 to 100 mTorr |
| Plasma Pressure Measurement | Additional capacitance manometer |
| Chamber Material | SS304 (prismatic or cylindrical); electro-polished |
| Chamber Sizes | 30/40/50/60 cm box size |
| Feedthrough Ports | Standard 1-inch, QF, CF, ISO |
| Observation Window | Front viewing window; rotatable shutter |
| Internal Lighting | Yes |
| Baking Capability | Up to 120 °C (internal) |
| Gas Inputs | Ar, N₂, O₂, He, CH₄, H₂; 3-channel MFM; real-time electronic display |
| Valve Configuration | Throttle, vent, and isolation valves |
| Substrate Heating | 50 to 600 °C (PID controlled) |
| Sample Rotation Speed | 3 to 30 rpm |
| Plasma Cleaning | RF plasma via substrate biasing |
| Thickness Monitoring | Dual-channel; 0.1 Å/s precision; 1 to 4 QCMs |
| Control System | Fully automatic computer control; touch screen panel; real-time LCD; LabVIEW |
| Cooling System | Automatic start-stop closed-loop water cooling |
| Experiment Cycle Time | 1.5 hours |
| Footprint | 75 × 120 cm |
| Door Clearance | Passes through standard doorways |
| Mobility | Lockable wheels |
| Warranty | 2 years (design, materials, and workmanship) |
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