Hybrid PVD Deposition System
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Hybrid PVD Deposition System – ToronPVD™ DS
Combined Thermal Evaporation and Magnetron Sputtering System
The ToronPVD™ DS is a hybrid PVD deposition system that places four-channel thermal evaporation and DC/RF magnetron sputtering inside a single SS304L chamber. It is designed for multilayer thin film deposition and co-deposition research. Four thermal sources rated from 10V to 250A, built around a proprietary boxed co-evaporation design, run alongside DC/RF sputtering sources in 1, 2, and 3-inch configurations. The system reaches a base pressure of 10⁻⁸ Torr, and a loaded chamber pumps down to 10⁻⁷ Torr within one hour. A 1.5-hour cycle and LabVIEW touch screen control make four to six experiments per day possible.
RF (13.6 MHz, 300 to 1200 W) and DC (0 to 1000 V, 2000 W) power supplies handle both insulating and conductive targets in every deposition mode. A digital MFC regulates Ar, N₂, O₂, He, CH₄, and H₂ at 0.1 SCCM, enabling reactive oxide and nitride deposition. Working pressure is tightly controlled from 1 to 100 mTorr for stable plasma generation. An optional PID heater, operating from 50 to 700 °C (±1 °C), accommodates 3", 4", and 6" wafers.
A dual-channel thickness controller supports 1 to 4 QCMs at 0.1 Å/s precision and tracks deposition rate and cumulative thickness across both thermal and sputtering sources. Optional ICP, CCP, and DC-RF plasma cleaning can prepare the substrate before deposition. The SS304L chamber is available in prismatic or cylindrical form and features electro-polished surfaces, standard 1", QF, CF, and ISO feedthrough ports, a UV-blocking observation window, and a rotatable shutter. At L120×W80×H180 cm, the system rolls on lockable wheels and fits through standard doorways.
Hybrid PVD Deposition System – ToronPVD™ DS Applications
The ToronPVD™ DS is built for research and production PVD laboratories that need thermal evaporation and magnetron sputtering in the same vacuum system. Running both deposition modes within one pump-down cycle shortens processing time and protects interface cleanliness. Its four-source co-evaporation capability and configurable sputtering guns make it a strong fit for heterogeneous multilayer and alloy film research programs.
- Multilayer Organic/Inorganic Device Research: Deposit organic or metallic layers by thermal evaporation, then sputtered oxide or nitride films, all in one vacuum cycle with no venting between layers.
- OLED and Organic Device Fabrication: Thermally evaporate organic emitter and transport layers, then add sputter-deposited conductive contact films for OLED and OPV device development.
- Co-Evaporation Alloy and Compound Film Research: Run multiple thermal sources at the same time to co-evaporate composition-controlled alloy and compound films that demand precise multi-material flux control.
- Hard Coating and Multi-Material Stack Research: Combine reactive sputtering of nitride and oxide films with thermally evaporated metallic seed or functional layers on a single deposition platform.
- Semiconductor Device Prototyping: Deposit metal contacts by thermal evaporation and dielectric films by RF sputtering on wafer substrates up to 6 inches, all in one pump-down session.
- Optical Thin Film Research: Pair thermally evaporated metallic reflector layers with reactive RF-sputtered oxide coatings to build optical filter, anti-reflective, and mirror film stacks.
- Academic and University Multi-Source PVD Research: Give research programs a flexible platform for evaporation and sputtering without switching tools between deposition steps.
Hybrid PVD Deposition System – ToronPVD™ DS Key Features
The ToronPVD™ DS brings together four-source thermal co-evaporation, DC/RF magnetron sputtering, MFC gas control, PLC automation, and dual-channel thickness monitoring on one high-vacuum platform for multilayer and multi-material thin film research.
- Four 10V to 250A Thermal Sources in a 2×2 Co-Evaporation Configuration: High-current co-evaporation sources in a proprietary boxed design that prevents cross-contamination and makes boat and basket replacement easy.
- Proprietary Boxed Source Design: The enclosed source geometry keeps evaporant from reaching neighboring crucibles, preserving composition purity in co-deposited films.
- DC/RF Sputtering Sources (1", 2", 3"), 85 mm Flex-Head Design: Handles magnetic and non-magnetic target materials, with a flex-head that allows flexible mounting and target alignment at every source position.
- RF Power Supply (13.6 MHz, 300 to 1200 W): Supports insulating targets and reactive sputtering of oxide and nitride films at both research and production power levels.
- DC Power Supply (0 to 1000 V, 2000 W): A high-power DC supply for sputtering metallic targets and for powering thermal co-evaporation sources.
- 10⁻⁸ Torr Base Pressure, 10⁻⁷ Torr in One Hour (Loaded): A turbomolecular and mechanical pump stack, with cryo and dry pump options, delivers the rapid pump-down behind the 1.5-hour experiment cycle.
- Wide-Range Vacuum Control (1000 to 10⁻⁹ Torr): One measurement system spans the full pressure range needed for both thermal evaporation and sputtering deposition.
- Precise Plasma Pressure Control (1 to 100 mTorr): Independent pressure setting maintains stable plasma conditions during sputtering and reactive deposition.
- Digital MFC Gas Control (Ar, N₂, O₂, He, CH₄, H₂) at 0.1 SCCM Sensitivity: Six-gas MFC delivery supports inert and reactive deposition in both evaporation and sputtering modes.
- 0.1 Å/s Dual-Channel Thickness Monitoring with 1 to 4 QCMs: Measures rate and thickness simultaneously and precisely across active thermal and sputtering source channels.
- Optional 50 to 700 °C PID Substrate Heater (±1 °C): Controls substrate temperature to support film crystallinity and adhesion, and works with 3", 4", and 6" wafers as well as 1 to 10 cm sample attachments.
- 2 to 30 rpm Sample Rotation: Continuously adjustable rotation promotes uniform film thickness across the substrate surface.
- Optional ICP, CCP, and DC-RF Substrate Plasma Cleaning: Prepares the substrate surface in situ before deposition, without breaking vacuum.
- Automatic Closed-Loop Water Cooling with Interlock: Thermal management blocks source operation unless coolant is flowing, protecting plasma sources and thermal source assemblies.
- Throttle, Vent, and Isolation Valve Configuration: Enables precise process pressure management, and the isolation valve lets the chamber hold vacuum between experiments.
- SS304L Chamber (Prismatic or Cylindrical) with Electro-Polished Surfaces: Exceptionally clean surfaces and standard 1", QF, CF, and ISO feedthrough ports allow flexible integration.
- Internal Lighting, 100 °C Baking, UV-Blocking Window, and Rotatable Shutter: A complete set of chamber accessories for process monitoring, conditioning, and moisture removal.
- Easily Upgradeable with Additional Thermal and Sputtering Sources: The modular architecture lets you add sources as research requirements grow.
- LabVIEW Touch Screen Control with Full Panel Backup: Automates sequence management for all source, gas, vacuum, and rotation functions, with a manual panel backup always available.
- 1.5-Hour Experiment Cycle, 4 to 6 Experiments Per Day: Fast pump-down and process cycles support multiple runs each day.
- L120×W80×H180 cm Mobile Platform on Lockable Wheels: A full-size combined system whose footprint still passes through standard doorways, allowing flexible laboratory placement.
- One-Year Warranty for Design, Materials, and Workmanship: Annual coverage for system components, design quality, and manufacturing.
Theory and Method
Thermal evaporation and magnetron sputtering each suit material classes and deposition conditions the other cannot match, so combining them in one chamber is practical for complex multilayer device structures. Thermal evaporation heats a resistive source until it vaporizes, producing a clean metallic or organic flux well suited to contact metals and organic emitters. Magnetron sputtering uses plasma to eject atoms from a solid target, covering refractory metals, oxides, and nitrides. Performing both in a single vacuum cycle removes air-exposure contamination at organic-inorganic and metal-dielectric interfaces.
Four thermal sources in a 2×2 co-evaporation configuration permit simultaneous multi-material deposition for alloy, composition-graded, and compound films. The proprietary boxed source design prevents cross-contamination between neighboring crucibles and simplifies source material replacement. DC/RF sputtering in 1, 2, and 3-inch flex-head configurations handles magnetic and non-magnetic targets alongside the thermal sources. A dual-channel thickness controller with 1 to 4 QCMs tracks the combined deposition at 0.1 Å/s across all active sources.
The turbomolecular and mechanical pump combination achieves a base pressure of 10⁻⁸ Torr and reaches 10⁻⁷ Torr within one hour in a loaded chamber. Wide-range vacuum control from 1000 to 10⁻⁹ Torr, together with precise 1 to 100 mTorr pressure control for plasma generation, covers every operating condition. LabVIEW touch screen control with full panel backup manages source power, gas, vacuum, and rotation sequences. An optional ICP, CCP, or DC-RF plasma cleaning unit readies substrate surfaces before deposition.
Hybrid PVD Deposition System - ToronPVD™ DS Technical Specifications
| Parameter | Specification |
|---|---|
| RF Power Supply | 13.6 MHz, 300 to 1200 W |
| DC Power Supply | 0 to 1000 V DC, 2000 W |
| Base Pressure | 10⁻⁸ Torr |
| Working Vacuum (Loaded, 1 hour) | 10⁻⁷ Torr |
| Vacuum Control Range | 1000 to 10⁻⁹ Torr |
| Pump Configuration | Turbomolecular + Mechanical (cryo and dry pump as options) |
| Sputtering Pressure Range | 1 to 100 mTorr |
| Thermal Evaporation Sources | 4 (10V to 250A; 2×2 co-evaporation configuration) |
| Source Design | Proprietary boxed (cross-contamination prevention) |
| Sputtering Sources | DC/RF; 1", 2", 3" targets; 85 mm flex-head |
| Magnetic/Non-Magnetic Sputtering | Yes |
| Gas Inputs | Ar, N₂, O₂, He, CH₄, H₂; digital MFC; 0.1 SCCM sensitivity |
| Chamber Material | SS304L (prismatic or cylindrical); electro-polished |
| Feedthrough Ports | Standard 1-inch, QF, CF, ISO |
| Substrate Heating (Optional) | 50 to 700 °C (PID, ±1 °C) |
| Wafer Compatibility | 3", 4", 6"; 1 to 10 cm sample attachments |
| Sample Rotation Speed | 2 to 30 rpm |
| Plasma Cleaning (Optional) | ICP, CCP, DC-RF |
| Thickness Monitoring | Dual-channel; 0.1 Å/s; 1 to 4 QCMs |
| Internal Baking | Up to 100 °C |
| Observation Window | UV-blocking; rotatable shutter |
| Cooling System | Automatic closed-loop water cooling (interlock protected) |
| Control System | LabVIEW touch screen; full panel backup |
| Experiment Cycle Time | 1.5 hours (4 to 6 experiments per day) |
| Footprint | L120 × W80 × H180 cm |
| Door Clearance | Passes through standard doors |
| Mobility | Lockable wheels |
| Warranty | 1 year (design, materials, and workmanship) |
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