Advanced Reactive Ion Etching (RIE) System
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Advanced Reactive Ion Etching (RIE) System - ToronRIE™ 400
The ToronRIE™ 400 is a high-performance reactive ion etching platform designed for 3-inch and 4-inch wafer formats. Its fluorine-based chemistry etches Si, SiOx, SixNy, dielectrics, and metals. A turbomolecular pump brings the chamber down to a base pressure of 10⁻⁷ mbar, while a process pressure window of 2×10⁻³ to 100×10⁻³ mbar supports steady plasma conditions. A 300 W RF generator with automatic matching at 13.56 MHz, combined with a tuned showerhead electrode, delivers etch rate non-uniformity under 4%. Strong DC self-bias capability produces improved anisotropic etch profiles.
A recipe-driven HMI touchscreen runs automatic processing, giving dependable automation and repeatable results throughout semiconductor research and production workflows. Integrated interlocks keep every stage of the process safe, and a PLC-based architecture controls the full etch sequence, from pump-down through process execution. Up to 8 gas lines allow flexible configurations for different etch chemistries, and pressure control stays precise and independent throughout. Photoresist stripping and descum etching are supported in addition to the core dielectric and silicon etch processes.
A mechanically clamped chuck with substrate cooling holds substrate temperature and position steady during etching, and sample heating is also offered for specific process needs. The adjustable chuck-to-electrode gap lets users fine-tune etch parameters for different chemistries and substrate geometries. The compact footprint and large viewing window allow visual inspection of the plasma and substrate while processing runs. A 10-inch HMI touchscreen provides an intuitive graphical interface for both process development and routine production runs.
Advanced Reactive Ion Etching (RIE) System - ToronRIE™ 400 Applications
The ToronRIE™ 400 serves advanced semiconductor research and MEMS fabrication programs that call for fluorine-based dry etching, high-vacuum process conditions, and wafer-scale uniformity below 4%. It delivers all of this in a compact, cleanroom-compatible platform. Its fluorine chemistry and 8-line gas configuration cover a wider process range than basic non-corrosive RIE systems.
- Silicon and Silicon Dioxide Dry Etching: Fluorine-based plasma etching of Si and SiO₂ layers for transistor gate patterning, trench definition, and contact via formation in semiconductor device research.
- Silicon Nitride Etch for MEMS and Device Isolation: Precise removal of SixNy layers for isolation structures, etch-stop applications, and suspended element fabrication in MEMS device programs.
- Metal Thin Film Etching: Plasma etching of aluminum, titanium, and related metal films for metallization patterning in semiconductor and advanced materials device fabrication.
- Photoresist Descumming and Stripping: Oxygen plasma removal of photoresist residues and scum layers on 3-inch and 4-inch wafers, with no wet chemical processing required.
- Dielectric Patterning for Advanced Structures: Fluorine-based etching of SiO₂ and SixNy gate dielectrics and inter-layer dielectrics for MOS, bipolar, and MEMS device research programs.
- High-Anisotropy Silicon Feature Etching: High DC self-bias operation produces deep, anisotropic silicon etch profiles for trench capacitors, shallow trench isolation, and MEMS microstructure fabrication.
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Advanced Semiconductor and University Research: A recipe-controlled, multi-step etch platform for silicon, oxide, nitride, and metallic material systems in academic and industrial research programs.
Advanced Reactive Ion Etching (RIE) System - ToronRIE™ 400 Key Features
The ToronRIE™ 400 is a compact parallel-plate RIE platform for 3-inch and 4-inch semiconductor and MEMS research. It combines fluorine-compatible chemistry, turbomolecular vacuum, showerhead gas distribution, high DC self-bias, and recipe-based HMI automation in a single system.
- 3-Inch and 4-Inch Wafer Configuration Support: Compatibility with two wafer sizes allows flexible processing across standard semiconductor research and production substrate formats.
- Fluorine-Based Chemistry for Si, SiOx, SixNy, Dielectrics, and Metals: Supports fluorine etch chemistries such as CF₄, SF₆, and related gases to pattern silicon and dielectric materials, extending capability beyond RIE systems limited to non-corrosive processes.
- Optimized Showerhead Electrode Design: Even gas distribution across the substrate reduces concentration gradients and supports a consistent etch rate and chemistry throughout the process zone.
- Etch Rate Non-Uniformity Below 4%: Etch uniformity across 3-inch and 4-inch wafers is verified by etch rate uniformity mapping data.
- High DC Self-Bias Capability: A high self-bias voltage raises ion energy at the substrate, producing anisotropic etch profiles with vertical sidewalls in Si and dielectric films.
- Turbomolecular Vacuum System, 10⁻⁷ mbar Base Pressure: A deep base vacuum lowers residual gas contamination, supporting high-quality plasma etching across fluorine and oxygen chemistries.
- Process Pressure Range of 2×10⁻³ to 100×10⁻³ mbar: A wide pressure window with precise, independent control accommodates a broad variety of plasma etch conditions.
- Up to 8 Gas Lines for Flexible Chemistry: Generous gas line capacity handles complex multi-species process chemistries and gas configurations for sequential etch steps.
- 300 W Auto-Matching RF Power Supply (13.56 MHz): Automatic impedance matching keeps RF power delivery stable across the full range of plasma conditions and gas chemistries.
- 10-Inch HMI Touchscreen Interface: A large graphical interface offers intuitive process control, real-time monitoring, and recipe management.
- Recipe-Based Automatic Processing: Stored recipes enable one-touch execution of multi-step etch sequences, with no manual parameter changes between steps.
- PLC-Controlled Architecture for Reliable Automation: PLC management of all system functions delivers repeatable results across semiconductor research and production workflows.
- Built-In Safety Interlock System: Comprehensive interlocks track RF, vacuum, and gas system status and automatically halt the process under unsafe conditions.
- Mechanically Clamped Chuck with Substrate Cooling: Positive clamping and active cooling protect temperature-sensitive substrates and photoresist masks during extended etch cycles.
- Sample Cooling and Heating Options: The temperature-controlled chuck cools sensitive samples and heats substrates for process chemistries that call for elevated temperatures.
- Adjustable Chuck-to-Electrode Distance: Fine adjustment of the electrode gap optimizes etch parameters for different process chemistries and target film configurations.
- Photoresist Stripping and Descum Etching: Oxygen plasma cleaning and photoresist removal are available alongside the primary fluorine etch processes.
- Compact Footprint with Large Observation Window: The laboratory-friendly footprint includes a direct viewing window into the chamber, so the plasma and substrate can be monitored during development.
Theory and Method
Reactive ion etching pairs chemical selectivity with directional ion bombardment, achieving an anisotropy that wet chemical etching cannot match. A 300 W RF source at 13.56 MHz generates plasma between the showerhead electrode and the substrate, creating reactive fluorine species from fluorine-containing gases. Fluorine radicals react with Si, SiO₂, and SixNy to form volatile etch products, which the turbomolecular system pumps away. Simultaneous ion bombardment strengthens directionality, producing the vertical profiles required for semiconductor and MEMS device patterning.
The optimized showerhead electrode spreads process gases evenly across the substrate, reducing the concentration gradients that lead to etch non-uniformity. The turbomolecular vacuum system reaches a 10⁻⁷ mbar base pressure, and the 2×10⁻³ to 100×10⁻³ mbar process range keeps plasma conditions stable throughout the etch. Together, these factors contribute to etch rate non-uniformity below 4% across 3-inch and 4-inch wafers. Up to 8 gas lines support complex multi-species chemistries under PLC control.
High DC self-bias accelerates ions with enough energy to etch vertical sidewalls anisotropically in Si, SiO₂, and dielectric films. The mechanically clamped chuck with substrate cooling carries away heat generated by ion bombardment, while the optional heating configuration widens the accessible substrate temperature range. Recipe-based processing through the 10-inch HMI touchscreen runs multi-step sequences without operator intervention between steps. Built-in interlocks monitor vacuum, RF, and gas system status to keep the entire etch process safe.
Advanced Reactive Ion Etching (RIE) System - ToronRIE™ 400 Technical Specifications
| Parameter | Specification |
|---|---|
| Supported Wafer Sizes | 3-inch and 4-inch |
| RF Power Supply | 300 W, auto-matching |
| RF Frequency | 13.56 MHz |
| Base Pressure | 10⁻⁷ mbar (turbomolecular pump) |
| Process Pressure Range | 2×10⁻³ to 100×10⁻³ mbar |
| Etch Rate Non-Uniformity | Below 4% |
| DC Self-Bias | High self-bias capability |
| Gas Lines | Up to 8 |
| Electrode Type | Optimized showerhead |
| Compatible Chemistries | Fluorine-based (CF₄, SF₆, etc.) and oxygen-based |
| Material Applications | Si, SiO₂, SixNy, metals, photoresist, polymers |
| Chuck | Mechanically clamped; water-cooled |
| Chuck Temperature Control | Cooling standard; heating available as option |
| Electrode Gap | Adjustable |
| Control System | PLC with 10" HMI touchscreen |
| Operating Mode | Manual and recipe-based automatic |
| Safety | Built-in interlock system (RF, vacuum, gas) |
| Pressure Control | Precise; independent from gas flow |
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