Reactive Ion Etching (RIE) System
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Reactive Ion Etching (RIE) System – ToronRIE™ 300
The ToronRIE™ 300 is a parallel-plate plasma dry etching platform designed for semiconductor and MEMS device fabrication. Its stainless steel cylindrical chamber accommodates substrates up to 3 inches. A 300 W RF power supply with fully automatic impedance matching generates plasma between the parallel electrodes, producing reactive ions that etch materials with high selectivity and uniformity. A DC bias voltage readout provides real-time process monitoring. The PLC-controlled system includes a graphical HMI interface and supports both manual and fully automatic etching modes.
A water-chilled sample holder with mechanical clamping keeps the substrate at a steady temperature and securely in position throughout the etch. The sample-to-electrode distance is adjustable, so operators can tune etch parameters for different process chemistries and substrate configurations. Process pressure is controlled independently of gas flow, and the automatic fast-acting pressure regulation responds to changing process conditions without interrupting the etch. The standard pump configuration reaches a base pressure of 5×10⁻² mbar, which meets the vacuum requirements of reactive ion etching processes.
The system etches Si, SiO₂, Si₃N₄, poly-Si, and selected metals. It also supports organic processes, including photoresist descumming, stripping, and polymeric film patterning. An optimized reaction chamber and electrode geometry deliver high etch rate uniformity across the substrate. With a compact W60×D95 cm footprint and a clean-room-compatible design, the system fits semiconductor laboratories and MEMS fabrication environments. A dry pump option is offered for oil-free vacuum system configurations.
Reactive Ion Etching (RIE) System – ToronRIE™ 300 Applications
The ToronRIE™ 300 reactive ion etching system supports semiconductor device fabrication, MEMS research, and academic thin film laboratories that need plasma dry etching with anisotropic etch profiles and high material selectivity. Its clean-room-compatible design and PLC automation make it a good fit for research programs as well as small-volume production environments.
Semiconductor Device Fabrication
Dry etching of Si, SiO₂, Si₃N₄, and poly-Si layers for transistor gate patterning, via formation, and trench definition in semiconductor research and prototyping.
MEMS Device Fabrication
Anisotropic etching of silicon and oxide layers to create suspended structures, sensor membranes, and actuator elements in microelectromechanical device research.
Photoresist Descumming and Stripping
Oxygen plasma removal of photoresist residues, scum layers, and post-etch organic contamination, with no wet chemical processing required.
Polymeric Thin Film Etching and Patterning
Plasma etching of polymer films, organic device layers, and coatings for printed electronics, biosensor, and flexible device applications.
Surface Activation and Wettability Modification
Plasma treatment of substrate surfaces to improve adhesion, wettability, or surface energy ahead of subsequent coating or bonding steps.
Academic and University Cleanroom Research
A compact RIE platform for thin film materials research, device prototyping, and cleanroom teaching environments.
Reactive Ion Etching (RIE) System – ToronRIE™ 300 Key Features
The ToronRIE™ 300 reactive ion etching system combines a 300 W RF plasma source, water-chilled electrode, automatic impedance matching, independent pressure control, and PLC automation in a compact, clean-room-compatible dry etch platform for semiconductor and MEMS research.
Up to 3-Inch Wafer and Substrate Processing
The system handles wafers and substrate pieces up to 3 inches, covering standard research wafer sizes for semiconductor and MEMS applications.
300 W RF Power Supply
A high-power RF source covers the full range of etch rates and plasma conditions required by the system's supported process chemistries.
Fully Automatic Impedance Matching
An automatic matching network optimizes power transfer between the RF generator and the plasma load, keeping conditions stable as pressures and gas chemistries change.
DC Bias Voltage Readout
A real-time display of self-bias voltage gives a continuous indication of ion energy at the substrate surface throughout the etch.
Water-Chilled Sample Holder
Active electrode cooling removes the heat generated by ion bombardment, protecting photoresist masks and temperature-sensitive samples from thermal damage during extended etch cycles.
Mechanical Sample Clamping
Positive mechanical clamping holds wafers and substrate pieces firmly in place, preserving stable positioning and thermal contact with the chilled electrode surface.
Adjustable Sample-to-Electrode Distance
A variable electrode gap allows etch rate, uniformity, and ion energy distribution to be tuned for different process chemistries and substrate geometries.
Automatic Fast-Acting Pressure Control
Fast-response pressure regulation keeps etch conditions stable through changes in gas consumption and during process transitions.
Process Pressure Control Independent from Gas Flow
Decoupled pressure and flow control lets operators adjust each parameter separately, widening the accessible process window.
5×10⁻² mbar Base Pressure
The achievable base pressure meets the vacuum requirements for RIE plasma generation and limits surface contamination on the substrate before etching begins.
High Etch Rate Uniformity
An optimized reaction chamber and electrode geometry deliver uniform etch rates across the substrate area, as confirmed by etch uniformity mapping data.
High Selectivity Between Materials
Plasma chemistry and RF parameters can be tuned to achieve high etch selectivity between the target material and the mask or underlying layers.
Stainless Steel Cylindrical Chamber
Stainless steel construction creates a durable, corrosion-resistant process environment compatible with oxygen and other non-corrosive plasma chemistries.
PLC Control with Graphical HMI Interface
PLC-based automation paired with an intuitive graphical HMI supports both manual and fully automatic etching operation.
Fast Process Cycles
Rapid pump-down and quick process setup shorten the time between successive etch runs, improving laboratory throughput.
Dry Pump Option
An oil-free vacuum pumping option removes the risk of hydrocarbon backstreaming, making it well suited to cleanroom and contamination-sensitive applications.
W60×D95 cm Compact Footprint
The small floor footprint allows installation in standard laboratory and cleanroom spaces without dedicated bay infrastructure.
Clean Room Compatible
The system design meets the requirements for installation and operation in semiconductor and MEMS cleanroom environments.
Reactive Ion Etching (RIE) System – ToronRIE™ 300 Theory and Method
Principle of Reactive Ion Etching
Reactive ion etching removes material from a substrate through a combination of chemical reaction and directional ion bombardment. At low pressure, an RF electric field creates a plasma between parallel electrodes, generating reactive species that include ions, radicals, and neutrals. These species attack the substrate chemically through surface reactions and physically through directional ion impact, which yields anisotropic etch profiles. Because it blends chemical and physical mechanisms, RIE offers greater selectivity and profile control than purely chemical wet etching.
RF Plasma Generation and Ion Energy Control
The 300 W RF supply applies voltage across the parallel electrodes at 13.56 MHz to sustain the plasma between them. The substrate electrode is electrically isolated from the chamber and self-biases negative relative to the plasma potential, which accelerates positive ions toward the substrate with controlled directionality. A DC bias voltage readout lets the operator monitor ion energy continuously during processing. Fully automatic impedance matching maximizes power transfer between the RF generator and the plasma load, keeping conditions stable for the duration of the etch.
Pressure Control and Process Flexibility
Process pressure is regulated independently of gas flow rate, and automatic fast-acting pressure control maintains stable etch conditions throughout the process. This separation lets the operator adjust pressure and gas composition individually, widening the parameter space available for different material systems. The system is designed for non-corrosive chemistry processes, making it well suited to oxygen-based photoresist stripping, polymeric film patterning, and surface modification without the need for aggressive halogen gas infrastructure. Water cooling of the sample holder carries away the heat deposited by ion bombardment during sustained etch cycles.
Reactive Ion Etching (RIE) System - ToronRIE™ 300 Technical Specifications
| Parameter | Specification |
|---|---|
| Substrate Size | Up to 3-inch wafer and substrate pieces |
| RF Power Supply | 300 W |
| RF Frequency | 13.56 MHz |
| Impedance Matching | Fully automatic |
| DC Bias | Self-bias voltage (continuously measured and displayed) |
| Base Pressure | 5×10⁻² mbar |
| Pressure Control | Automatic, fast-acting; independent from gas flow |
| Chamber Construction | Stainless steel, cylindrical |
| Sample Holder | Water-chilled |
| Sample Clamping | Mechanical |
| Electrode Gap | Adjustable |
| Control System | PLC with graphical HMI interface |
| Operating Modes | Manual and fully automatic |
| Vacuum Pump | Standard configuration; dry pump option available |
| Compatible Chemistries | Non-corrosive processes (O₂, Ar, N₂, and similar) |
| Material Applications | Si, SiO₂, Si₃N₄, poly-Si, selected metals, photoresist, polymeric films |
| Footprint | W60 × D95 cm |
| Clean Room Compatible | Yes |
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