Torontech

HiPIMS System

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HiPIMS System: ToronHiPIMS™ 1000

High-Power Impulse Magnetron Sputtering (HiPIMS) System

The ToronHiPIMS™ 1000 is a fully automated high-power impulse magnetron sputtering platform built for research and production thin film deposition where high plasma ionization is essential. Adjustable-width, high-voltage pulses of 300 to 1000 VDC create an ionization density of 70 to 90%. The result is an ionized metal vapor flux that improves film density, adhesion, and conformality. The SS304 chamber, available in prismatic or cylindrical form from 30 to 60 cm, reaches a base pressure of 10⁻⁷ Torr and supports one to four HiPIMS sources. A touch screen and real-time LCD displays manage the automated deposition cycle from start to finish.

Pulsed-DC Cleaning, Synchronization, and Gas Control

An optional synchronized Pulsed-DC plasma cleans the substrate surface in situ before deposition. It removes native oxides and contaminants without breaking vacuum. Target-sample synchronization, combined with voltage, current, and timing monitoring, provides precise control over the pulse delivery sequence and helps optimize film structure in HiPIMS processes. Gas inputs regulated by mass flow meters and fitted with isolation valves accommodate Ar, N₂, and other process gases, enabling reactive HiPIMS deposition of nitrides, oxides, and carbides. An isolation valve lets the chamber hold vacuum between runs, which trims cycle-time overhead.

Substrate Heating, Rotation, and Thickness Monitoring

Substrate temperature is PID controlled from 50 to 600 °C, while rotation from 2 to 30 rpm promotes uniform film deposition across the substrate surface. A dual-channel controller supporting 1 to 4 QCMs tracks film thickness and deposition rate in real time at 0.1 Å/s, with averaged output across the sensors. Internal lighting is included, along with 120 °C baking capability for chamber conditioning and moisture removal before deposition. With a 75×120 cm footprint and lockable wheels, the system passes through standard 85 cm doorways.

HiPIMS System: ToronHiPIMS™ 1000 Applications

Where the HiPIMS System Delivers Results

The ToronHiPIMS™ 1000 serves thin film deposition work in which conventional magnetron sputtering cannot reach the density, adhesion, and conformality that advanced coatings and devices demand. A high ionization fraction, reactive gas capability, and target-sample synchronization make the system suitable for a wide range of materials and substrate geometries.

Key Application Areas

  • Hard Coating and Wear-Resistant Film Deposition: HiPIMS deposition of TiN, CrN, TiAlN, DLC, and related hard coatings onto cutting tools, molds, and mechanical components, where high film density and strong adhesion are required.
  • Optical Thin Film Research: Reactive HiPIMS deposition of TiO₂, SiO₂, and other optical oxide coatings, with excellent stoichiometry control and low optical scatter.
  • Semiconductor and Microelectronics Research: Deposition of barrier layers, contact metals, and functional oxide films on wafer substrates that call for void-free, dense films at controlled substrate temperatures.
  • Energy and Solar Cell Research: Reactive HiPIMS deposition of transparent conductive oxides, nitride absorbers, and functional contact layers for thin-film photovoltaic and energy storage research.
  • Biomedical Implant Coating: HiPIMS deposition of biocompatible TiN, DLC, and related coatings onto implant surfaces, where strong adhesion and low defect density at the film-substrate interface matter.
  • Diffusion Barrier and Encapsulation Layer Deposition: Deposition of dense, conformal nitride and oxide barrier layers for microelectronic packaging and OLED device encapsulation.
  • Reactive Nitride and Carbide Film Research: Controlled reactive HiPIMS deposition of transition metal nitrides, carbides, and carbonitrides for materials science and surface engineering research programs.

HiPIMS System

HiPIMS System: ToronHiPIMS™ 1000 Key Features

Integrated High-Vacuum Thin Film Platform

The ToronHiPIMS™ 1000 combines high-voltage pulsed magnetron sputtering, PID substrate heating, MFM gas control, synchronized Pulsed-DC surface cleaning, and automated layer-by-layer deposition in a single high-vacuum system.

Plasma and Sputtering Source Features

  • 70 to 90% Ionization Density with 300 to 1000 VDC Adjustable Pulses: Very high plasma ionization sets HiPIMS apart from conventional sputtering. It allows controlled ion energy at the substrate surface, which improves film density, adhesion, and conformality.
  • 1 to 4 Configurable HiPIMS Sputtering Sources: Single-target or multi-target setups support single-material, co-sputtered, or sequenced multi-layer deposition within one vacuum cycle.
  • Target-Sample Synchronization with Voltage-Current-Timing Display: Pulse timing between the target and substrate bias is synchronized, and voltage, current, and timing parameters appear in real time to support process optimization and reproducibility.
  • Synchronized Pulsed-DC Plasma Surface Cleaning: In-situ substrate preparation with synchronized plasma removes native oxides and contaminants without breaking vacuum before deposition begins.

Control and Automation

  • Fully Automatic Computer Control with Touch Screen: A touch screen panel manages all system operations automatically, with real-time LCD status display throughout the deposition process.
  • Fully Automated Layer-by-Layer Deposition: Automated control handles each layer independently, supporting multi-layer process sequences without manual intervention.

Chamber and Vacuum Performance

  • SS304 Chamber (30 to 60 cm, Prismatic or Cylindrical): A clean, electro-polished stainless steel chamber is offered in multiple sizes to suit different substrate and load configurations.
  • Standard 1-inch, QF, CF, and ISO Feedthrough Ports: Configurable port options allow flexible integration of feedthroughs, gauges, and process access.
  • Internal Lighting and 120 °C Baking Capability: Internal lighting enables visual chamber inspection, and the baking option removes moisture and conditions the chamber before high-purity runs.
  • 10⁻⁷ Torr Base Pressure with Fast Pump-Down: The system reaches 10⁻⁶ Torr in 30 minutes. A turbomolecular and mechanical pump combination is standard, with a cryo-pump and dry pump available as options.
  • Wide-Range Vacuum Control (1000 to 10⁻⁹ Torr): Integrated vacuum measurement and control covers the full pressure range for both process gas introduction and base vacuum monitoring.
  • Vacuum Hold Between Runs: An isolation valve keeps the chamber under vacuum when idle, shortening pump-down time between successive experiments.

Substrate, Gas, and Thickness Control

  • 50 to 600 °C PID Substrate Heating: PID-controlled substrate temperature across a wide range supports deposition at elevated temperatures for improved film crystallinity and adhesion.
  • 2 to 30 rpm Adjustable Sample Rotation: Continuously adjustable rotation promotes an even film thickness distribution across the substrate during deposition.
  • MFM Controlled Gas Inputs with Isolation Valves: Mass flow meter controlled delivery of Ar, N₂, and other process gases supports both inert and reactive HiPIMS processes, with Ar or N₂ chamber backfill.
  • 0.1 Å/s Dual-Channel Thickness Monitoring with 1 to 4 QCMs: Precise deposition rate and cumulative thickness measurement is provided, with averaged-value output across multiple QCM sensors.

Cooling, Footprint, and Warranty

  • Automatic Closed-Loop Water Cooling: Active water cooling manages heat from the power supplies, targets, and chamber walls throughout HiPIMS operation.
  • 75×120 cm Mobile Platform: The 75×120 cm footprint and lockable wheels allow the system to pass through standard 85 cm doorways, offering flexible placement in laboratory and production environments.
  • One-Year Full Warranty: Coverage includes design, materials, and workmanship.

HiPIMS System: ToronHiPIMS™ 1000 Theory and Method

How High-Power Impulse Magnetron Sputtering Works

HiPIMS delivers extremely high power densities to a magnetron target in short, high-voltage pulses, reaching instantaneous power levels far beyond those of conventional DC or RF sputtering. At peak pulse power, plasma density near the target climbs sharply, and a large fraction of the sputtered metal atoms is ionized before reaching the substrate. These ionized metal species move under the influence of plasma and applied bias fields, which allows control over deposition angle and improves film density on complex substrate geometries. Pulse width, voltage, and repetition rate can each be adjusted independently to suit the material and process.

Ionization Control and Target-Sample Synchronization

The 300 to 1000 VDC pulse range, together with adjustable pulse width, sets the ionization fraction for a given target. Ionization densities of 70 to 90% clearly separate HiPIMS from conventional sputtering, where most of the sputtered flux arrives at the substrate as neutral atoms with a broad angular distribution. Target-sample synchronization coordinates the arrival of ionized flux with the applied substrate bias, so ion energy at the growth surface can be controlled independently of the plasma condition. An optional synchronized Pulsed-DC mode applies the same pulse-gating approach to in-situ surface cleaning before deposition.

Reactive Deposition and Vacuum Conditioning

Reactive HiPIMS introduces N₂, O₂, or other reactive gases through MFM-controlled inputs, forming nitride, oxide, or carbide films from pure metal targets. The high ionization fraction lessens the hysteresis effect that limits rate stability in conventional reactive sputtering, which widens the stable process window. An isolation valve preserves chamber vacuum between depositions, and a 120 °C baking option conditions the chamber walls to support a low base pressure. A turbomolecular and mechanical pump combination, with cryo-pump and dry pump options, reaches a base pressure of 10⁻⁷ Torr.

HiPIMS System - ToronHiPIMS™ 1000 Technical Specifications

Parameter Specification
HiPIMS Pulse Voltage 300 to 1000 VDC
HiPIMS Pulse Width Adjustable
Plasma Ionization Density 70 to 90%
Number of HiPIMS Sources 1 to 4 (configurable)
Target-Sample Synchronization Yes; voltage-current-timing display
Plasma Surface Cleaning Synchronized Pulsed-DC plasma
Gas Inputs Ar, N₂, and others; MFM controlled; isolation valves; Ar or N₂ backfill
Chamber Material SS304 (prismatic or cylindrical)
Chamber Sizes 30/40/50/60 cm box size
Chamber Surface Finish Electro-polished
Feedthrough Ports Standard 1-inch, QF, CF, ISO
Internal Lighting Yes
Baking Capability Up to 120 °C (internal)
Base Pressure 10⁻⁷ Torr
Working Vacuum Level (Pump-Down Time) 10⁻⁶ Torr in 30 minutes
Vacuum Control Range 1000 to 10⁻⁹ Torr
Pump Configuration Turbomolecular + Mechanical (cryo-pump and dry pump as options)
Sample Heating Range 50 to 600 °C (PID controlled)
Sample Rotation Speed 2 to 30 rpm
Thickness Monitoring Dual-channel; 0.1 Å/s precision; 1 to 4 QCMs; averaged value
Cooling System Automatic closed-loop water cooling
Control System Fully automatic computer control; touch screen panel; real-time LCD
Footprint 75 × 120 cm
Door Clearance Passes through standard 85 cm doorway
Mobility Lockable wheels
Warranty 1 year (design, materials, and workmanship)
Delivery time varies upon stock availability. Our standard dispatch and shipping times are generally within 1 week, however for some high demand items the delivery may be extended to 2-3 weeks. If you require these items urgently please contact us to check accurate stock availability and to organize faster shipping methods.
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Important Delivery Information

Delivery time varies upon stock availability. Our standard dispatch and shipping times are generally within 1 week, however for some high demand items the delivery may be extended to 2-3 weeks.

Need it urgently? Contact us here to check stock and organize faster shipping.

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