Magnetron Sputtering System - ToronSputter™ Mag
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Magnetron Sputtering System: ToronSputter™ Mag
The ToronSputter™ Mag is a fully automated magnetron sputtering platform built for thin film deposition in both research and production settings, driven by DC and RF power. A DC supply rated at 0 to 1000 V and 2000 W handles conductive targets, while an RF supply operating at 13.56 MHz and 300 to 1200 W covers insulating materials and reactive processes. The system accepts one to four sources in 1 to 4-inch target diameters, allowing both single-target and multi-target deposition. Its SS304 chamber, available from 30 to 60 cm, reaches a base pressure of 10⁻⁸ Torr and pumps down to 2×10⁻⁶ Torr in 20 minutes.
Gas Control, Pressure Regulation, and Substrate Preparation
Three-channel MFM gas control handles Ar, N₂, O₂, He, CH₄, and H₂, supporting both inert and reactive sputtering across a 1 to 100 mTorr range. Throttle, vent, and isolation valves allow precise pressure setting. During reactive processes, a capacitance manometer adds a further plasma pressure measurement. Substrates are prepared through PID-controlled heating from 50 to 700 °C, rotation at 2 to 30 rpm, and RF plasma cleaning via substrate biasing. Wide-range vacuum control (1000 to 10⁻⁹ Torr) and a 120 °C bake-out help maintain base pressure and chamber condition.
Thickness Monitoring and Automated Process Control
A dual-channel thickness controller supports 1 to 4 QCMs with 0.1 Å/s resolution. Managed through LabVIEW automation, it runs each layer sequence fully automatically from start to finish.
Chamber Design, Cooling, and Footprint
The SS304 chamber comes in 30, 40, 50, and 60 cm configurations with electro-polished surfaces and standard 1-inch, QF, CF, and ISO ports. Automatic start-stop closed-loop water cooling and an observation window with a rotatable shutter support monitored deposition. The unit measures 75×120 cm and sits on lockable wheels, so it passes through standard doorways. Internal lighting and 120 °C baking capability are also included.
Magnetron Sputtering System: ToronSputter™ Mag Applications
The ToronSputter™ Mag supports PVD research and production facilities that need DC and RF magnetron sputtering for a broad range of conductive and insulating materials. Multi-target flexibility and precise reactive sputtering control make it suitable for many deposition tasks.
- Semiconductor and Microelectronics Research: Deposits metal contacts, barrier layers, and dielectric films on wafer substrates through DC and RF magnetron sputtering, with controlled rates and compositions.
- Optical Thin Film Deposition: Applies reactive RF sputtering to TiO₂, SiO₂, and other optical oxide coatings, using capacitance manometer pressure control to achieve stoichiometric accuracy.
- Hard Coating and Wear-Resistant Surface Engineering: Uses reactive DC and RF sputtering to produce TiN, CrN, TiAlN, and DLC films on cutting tools, molds, and mechanical components.
- Energy Device Research: Sputters transparent conductive oxides, barrier layers, and metallic contacts for research on thin-film solar cells, fuel cells, and energy storage devices.
- Materials Science and Alloy Film Research: Runs multi-target and co-sputtering of alloys, compound films, and mixed oxides for compositional studies and structure-property research.
- Electronics and RF Component Coating: Applies DC sputtering of Au, Al, Ti, and other conductive metals for electronics packaging, RF connectors, and precision component metallization.
- Academic and University PVD Laboratories: Offers a flexible multi-source platform for teaching and materials research across a wide range of thin film deposition materials and techniques.

Magnetron Sputtering System: ToronSputter™ Mag Key Features
The ToronSputter™ Mag combines DC and RF magnetron sputtering with three-channel MFM gas control, LabVIEW layer automation, and capacitance manometer plasma pressure monitoring. Together, these capabilities form a multi-target, high-vacuum sputtering platform.
- 1 to 4 DC/RF Magnetron Sputter Sources (1" to 4" Targets): A layout configurable from one to four sources supports single-material, co-sputtered, and sequenced multi-layer thin film deposition.
- DC Power Supply (0 to 1000 V, 2000 W): This high-power supply drives conductive target sputtering, with deposition rate set through voltage control.
- RF Power Supply (13.56 MHz, 300 to 1200 W): The RF range suits insulating target sputtering as well as reactive oxide and nitride processes.
- 3-Channel MFM Gas Control (Ar, N₂, O₂, He, CH₄, H₂): Three independent gas channels offer real-time electronic control and display for inert and reactive sputtering.
- Additional Capacitance Manometer for Plasma Pressure: A dedicated capacitance manometer delivers precise plasma pressure measurement during reactive sputtering.
- Throttle, Vent, and Isolation Valves, 1 to 100 mTorr Precision: These valves allow accurate working pressure adjustment, supporting reactive process gas control and plasma stability.
- 10⁻⁸ Torr Base Pressure, 2×10⁻⁶ Torr in 20 Minutes: A turbomolecular pump paired with a mechanical pump provides fast pump-down to working vacuum. Cryo and dry pumps are available as options.
- Wide-Range Vacuum Control (1000 to 10⁻⁹ Torr): Integrated vacuum measurement and control spans atmospheric pressure to deep vacuum, covering both process gas and base pressure monitoring.
- LabVIEW-Based Layer-by-Layer Deposition Control: PC-based LabVIEW automation manages each deposition layer independently, supporting complex multi-layer process sequences.
- 0.1 Å/s Dual-Channel Thickness Measurement with 1 to 4 QCMs: Scalable multi-sensor monitoring tracks thickness and rate across up to four QCM channels at the same time.
- 50 to 700 °C PID Substrate Heating: PID-controlled substrate temperature management enables deposition at elevated temperatures, benefiting film crystallinity and adhesion.
- 2 to 30 rpm Sample Rotation: Adjustable substrate rotation promotes uniform film thickness across the substrate surface.
- Sample Plasma Cleaning Unit (RF via Substrate Biasing): In-situ RF plasma cleaning removes native surface oxides before deposition without breaking vacuum.
- Automatic Start-Stop Closed-Loop Water Cooling: Thermal management switches cooling on and off based on system state, protecting the sources and chamber throughout operation.
- Vacuum Hold with Isolation Valve: The main chamber remains under vacuum when idle, shortening pump-down time between successive experiments.
- SS304 Chamber (30 to 60 cm, Prismatic or Cylindrical): Clean, electro-polished inner surfaces come in several box size options with an SS304 liner.
- Standard 1-inch, QF, CF, and ISO Feedthrough Ports: Configurable port selection offers flexible integration of feedthroughs, gauges, and process gas lines.
- Internal Lighting and 120 °C Baking Capability: Internal lighting enables chamber inspection, while baking supports conditioning and residual moisture removal.
- Front Viewing Window with Rotatable Shutter: The window gives direct visual access for process monitoring, and the rotatable shutter allows precise deposition timing.
- Fully Automatic Computer Control with Touch Screen Panel: A touch screen and real-time LCD displays manage all system operations automatically throughout the process.
- 1.5-Hour Experiment Cycle Time: Fast pump-down and a short process cycle support consistent multi-run throughput for research and production programs.
- 75×120 cm Mobile Platform on Lockable Wheels: The compact footprint passes through standard doorways and can be repositioned within the facility.
- One-Year Warranty for Design, Materials, and Workmanship: Annual coverage applies to system components, design, and manufacturing quality.
Magnetron Sputtering System: ToronSputter™ Mag Theory and Method
In magnetron sputtering, a process gas is ionized and the resulting ions strike a cathode target, knocking atoms loose so they condense on the substrate as a thin film. A magnetic field holds the plasma close to the target face, which raises ion density and sputtering yield even at low working pressures. DC power, applied at 0 to 1000 V, handles conductive targets. RF power at 13.56 MHz dissipates the charge that accumulates on insulators, extending the range of usable materials to oxides, nitrides, and dielectric films produced from ceramic targets.
Multi-Target and Reactive Sputtering
Configurations with one to four sources allow sequential deposition within a single pump-down cycle, which reduces contamination between material layers. Co-sputtering from sources powered at the same time produces composition-graded and alloy films without separate deposition steps. In reactive sputtering, N₂ or O₂ enters through MFM-controlled inputs while a metallic target is sputtered, forming nitride or oxide films without the need for compound targets. Throttle valve and capacitance manometer control keep plasma pressure stable across the 1 to 100 mTorr reactive process window.
Automation, Substrate Preparation, and Growth Control
LabVIEW automation manages the complete layer sequence, controlling shutter timing, power levels, and gas flow at each step with no operator intervention between layers. RF plasma cleaning via substrate biasing removes native oxides before deposition, improving adhesion at the film-substrate interface. PID substrate heating at 50 to 700 °C promotes film crystallinity and surface diffusion during growth. Between runs, the isolation valve keeps the main chamber under vacuum, eliminating pump-down overhead for successive depositions.
Magnetron Sputtering System - ToronSputter™ Mag Technical Specifications
| Parameter | Specification |
|---|---|
| DC Power Supply | 0 to 1000 V DC, 2000 W |
| RF Power Supply | 13.56 MHz, 300 to 1200 W |
| Number of Sputtering Sources | 1 to 4 (DC/RF) |
| Target Diameters | 1", 2", 3", 4" |
| Base Pressure | 10⁻⁸ Torr |
| Working Vacuum (Pump-Down Time) | 2×10⁻⁶ Torr in 20 minutes |
| Vacuum Control Range | 1000 to 10⁻⁹ Torr |
| Pump Configuration | Turbomolecular + Mechanical (cryo and dry pump as options) |
| Sputter Working Pressure Range | 1 to 100 mTorr (throttle valve controlled) |
| Plasma Pressure Measurement | Additional capacitance manometer |
| Chamber Material | SS304 (prismatic or cylindrical); electro-polished |
| Chamber Sizes | 30/40/50/60 cm box size |
| Feedthrough Ports | Standard 1-inch, QF, CF, ISO |
| Observation Window | Front viewing window; rotatable shutter |
| Internal Lighting | Yes |
| Baking Capability | Up to 120 °C (internal) |
| Gas Inputs | Ar, N₂, O₂, He, CH₄, H₂; 3-channel MFM; real-time electronic display |
| Valve Configuration | Throttle, vent, and isolation valves |
| Substrate Heating | 50 to 700 °C (PID controlled) |
| Sample Rotation Speed | 2 to 30 rpm |
| Plasma Cleaning | RF plasma via substrate biasing |
| Thickness Monitoring | Dual-channel; 0.1 Å/s precision; 1 to 4 QCMs |
| Control System | Fully automatic computer control; touch screen panel; real-time LCD; LabVIEW |
| Cooling System | Automatic start-stop closed-loop water cooling |
| Experiment Cycle Time | 1.5 hours |
| Footprint | 75 × 120 cm |
| Door Clearance | Passes through standard doorways |
| Mobility | Lockable wheels |
| Warranty | 1 year (design, materials, and workmanship) |
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