Electron Beam Evaporation System
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Electron Beam Evaporation System: ToronEva™ EB
High-Vacuum E-Beam Deposition for Metals, Alloys, and Refractory Oxides
ToronEva™ EB is a high-vacuum electron beam evaporation system built for thin film deposition of metals, alloys, and oxides with high melting points. Its e-beam gun runs at 10 kV with beam current up to 600 mA, depositing materials such as Al, Pt, Ni, TiO₂, and SiO₂ while recipe-based control adjusts the deposition rate. The SS304 chamber achieves a base pressure of 10⁻⁸ Torr, satisfying the purity standards of demanding PVD research applications. Additional 2500 W thermal sources enable co-evaporation and doping within the same vacuum cycle.
Substrate Heating, Rotation, and Film Uniformity
PID-regulated substrate heating spans 50 to 700 °C with ±1 °C sensitivity. Paired with rotation from 2 to 30 rpm, it delivers film thickness uniformity better than 3% across 4-inch substrates. The system handles 3", 4", and 6" wafers, as well as sample attachments from 1 to 15 cm. A dual-channel thickness controller with two QCMs tracks deposition rate in real time down to 0.1 Å/s.
Automated Computer Control
Fully automatic operation runs through LabVIEW-based software and real-time LCD displays. This control platform coordinates vacuum sequencing, interlocks, and power delivery.
Reactive Evaporation and Gas Management
A digital mass flow meter system regulates Ar, N₂, O₂, He, and CH₄ inputs with 0.2 sccm sensitivity, supporting reactive evaporation and process gas control. An integrated plasma cleaning unit (ICP, CCP, and DC-RF) conditions substrate surfaces before deposition and removes contamination at the interface.
Chamber Design, Throughput, and Port Configuration
The electro-polished, water-cooled chamber includes a UV-blocking observation window and supports a 1.5-hour experiment cycle, which allows four to six deposition runs per day. Configurable 1-inch, QF, CF, and ISO ports provide room for extra thermal sources and process feedthroughs as required.
ToronEva™ EB Electron Beam Evaporation System Applications
Single-Platform Thin Film Deposition for Refractory Metals and Complex Oxides
The ToronEva™ EB supports thin film research programs that call for high-purity deposition of refractory metals and complex oxide materials, which resistive evaporation alone cannot process. Substrate heating, reactive gas capability, and in-situ plasma cleaning combine in one platform, covering applications that would otherwise require several separate deposition tools.
Semiconductor and Microelectronics Research
Researchers use the system to deposit gate dielectrics, metal contacts, and passivation layers, including TiO₂, SiO₂, Pt, and Ni, on wafers up to 6 inches in size.
Optical Thin Film Research
The system deposits high-refractive-index oxide layers and metallic mirrors for photonic devices, optical filters, and anti-reflective coatings.
Academic and University PVD Laboratories
It enables research-grade thin film fabrication for materials science, device physics, and condensed matter studies that require vacuum levels below 10⁻⁷ Torr.
MEMS and NEMS Device Fabrication
Conformal metallization and functional oxide deposition support prototype development of sensors, actuators, and resonators.
Organic Electronics and Photovoltaics
The platform deposits transparent conductive oxide contacts and metallic electrodes onto organic device stacks, with precise control over deposition rate and substrate temperature.
Hard Coating and Surface Engineering Research
E-beam deposition of wear-resistant oxide, nitride, and metallic films serves tribology and materials durability studies.
Reactive Oxide and Nitride Film Research
Controlled reactive deposition, using process gas introduction with metallic sources, produces TiO₂, SiO₂, Al₂O₃, TiN, and related compound films.
ToronEva™ EB Electron Beam Evaporation System Key Features
Complete High-Vacuum PVD Platform for Demanding Research
The ToronEva™ EB brings together a 10 kV e-beam source, PID substrate heating, multi-channel gas control, in-situ plasma cleaning, and auxiliary thermal sources within one high-vacuum platform designed for demanding research PVD applications.
10 kV, 600 mA E-Beam Power Supply with Arc Protection
This high-voltage supply focuses beam energy on the target, while active arc protection guards against discharge damage when depositing insulating or reactive materials.
Electro-Polished SS304 Vacuum Chamber
The chamber is available in a prismatic or cylindrical form, with water-cooled, electro-polished surfaces and an SS304 liner. This construction limits particulate generation and makes post-deposition cleaning easier.
10⁻⁸ Torr Base Pressure
A turbomolecular and mechanical pump combination (dry pump optional) reaches a base pressure of 10⁻⁸ Torr. A fully loaded system attains a working pressure of 10⁻⁷ Torr in one hour.
Wide-Range Vacuum Control with Pressure Fix (1000 to 10⁻⁹ Torr)
The integrated vacuum control and measurement system lets the operator set a target pressure and hold it throughout deposition.
50 to 700 °C PID Substrate Heating
Closed-loop temperature control with ±1 °C sensitivity covers a broad substrate temperature range, promoting crystallinity and adhesion in oxide and functional films.
2 to 30 rpm Substrate Rotation with Homogeneity Control
Continuously adjustable rotation, set from the panel or a PC, delivers film thickness homogeneity better than 3% across 4-inch samples.
Multi-Format Sample Holder Selection
The holder options accommodate 3", 4", and 6" wafers, along with sample attachments from 1 to 15 cm, to suit a wide variety of substrate geometries.
Recipe-Controlled Deposition of Metals and Oxides
Pre-set deposition recipes govern the e-beam power ramp and rate for Al, Pt, Ni, TiO₂, SiO₂, and other materials at high evaporation rates.
2500 W Sequential Thermal Sources for Co-Evaporation
Auxiliary 8 V to 300 A thermal sources add co-evaporation and doping capability within the same vacuum cycle. The source design prevents cross-contamination and allows easy source replacement.
0.1 Å/s Dual-Channel Thickness Rate Controller with Two QCMs
Two independent QCMs track deposition rate with 0.1 Å/s precision. An optional ion gun can be added for further process control.
Digital Mass Flow Meter Gas Control (Ar, N₂, O₂, He, CH₄)
A panel- or PC-operated MFM system regulates multiple process gas inputs at 0.2 sccm sensitivity, supporting reactive deposition and controlled gas mixing.
ICP, CCP, and DC-RF Plasma Cleaning Unit
In-situ conditioning of the substrate surface before deposition removes native oxides and contaminants, improving film adhesion and interface quality.
Configurable Port Selection (1-inch, QF, CF, ISO)
Standard and high-vacuum port options support custom feedthrough configurations and simple installation of additional thermal sources.
UV-Blocking Observation Window with Rotatable Shutter
A front-mounted, UV-filtering window allows process monitoring while protecting the operator. The shutter position integrates with the LabVIEW-based thickness control.
Dual-Mode Control (Automatic Computer and Manual Panel)
Fully automatic computer control with LabVIEW-based software and manual panel operation can run independently or together, with real-time LCD status displayed throughout the process.
Interlock-Protected Automatic Water Cooling System
Closed-loop cooling with automatic on/off switching and interlock protection blocks e-beam power delivery unless coolant is flowing, safeguarding the gun and chamber components.
Throttle, Vent, and Isolation Valve Configuration
The isolation valve keeps the chamber under vacuum between experiments, while the throttle valve provides precise working pressure control during deposition.
1.5-Hour Experiment Cycle with Multi-Run Throughput
Built for consistent daily use, the system makes four to six deposition experiments per day achievable in routine operation.
Two-Year Full Warranty
Coverage for materials, design, and workmanship gives research facilities extended assurance on their investment.
ToronEva™ EB Electron Beam Evaporation System: Theory and Method
How Electron Beam Evaporation Works
In electron beam evaporation, a focused stream of high-energy electrons strikes source material seated in a water-cooled copper crucible. The target reaches its evaporation temperature while the crucible itself stays cool. A 10 kV electron gun steers the beam magnetically and concentrates energy on the target surface, with beam current reaching 600 mA. This method vaporizes refractory materials that resistive heating cannot handle, including high-melting-point metals and complex oxides. The vaporized atoms move in straight lines through the vacuum and condense on the substrates positioned above.
Vacuum Requirements and Pressure Control
E-beam evaporation demands a deeper vacuum than resistive thermal evaporation, since the electron beam can ionize residual gas, which leads to scattering and beam instability at higher pressures. A turbomolecular and mechanical pump combination brings the SS304 chamber down to a 10⁻⁸ Torr base pressure, low enough to maintain a well-focused, stable beam. An isolation valve holds the chamber under vacuum between experiments, which removes pump-down time between consecutive runs. Throttle and vent valves permit precise pressure adjustment across the 1000 to 10⁻⁹ Torr range.
Reactive Evaporation, Plasma Cleaning, and Substrate Heating
Reactive evaporation feeds O₂ or N₂ through MFM-controlled gas lines, forming oxide or nitride films from metallic sources without the need for compound targets. Before deposition, the ICP, CCP, and DC-RF plasma cleaning stage strips native oxides from substrate surfaces, improving nucleation and adhesion. Substrate heating from 50 to 700 °C encourages film crystallinity during growth, which matters especially for oxide films, where the crystalline phase determines film properties.
Real-Time Rate Monitoring
A dual-channel thickness monitor with two QCMs follows the deposition rate down to 0.1 Å/s and supplies continuous feedback to e-beam power control.
Electron Beam Evaporation System - ToronEva™ EB Technical Specifications
| Parameter | Specification |
|---|---|
| E-Beam Power Supply | 10 kV, 600 mA |
| Arc Protection | Integrated |
| Auxiliary Thermal Sources Power Supply | 2500 W (8 V – 300 A), sequential |
| Base Pressure | 10⁻⁸ Torr |
| Working Vacuum Level (Pump-Down Time) | 10⁻⁷ Torr in 1 hour (fully loaded system) |
| Vacuum Control Range | 1000 to 10⁻⁹ Torr |
| Pump Configuration | Turbomolecular + Mechanical (dry pump optional) |
| Chamber Material | SS304 (prismatic or cylindrical); electro-polished, water-cooled |
| Chamber Liner | SS304 |
| Observation Window | UV-blocking, front-mounted; rotatable shutter |
| Ports | Standard 1", QF, CF, ISO (configurable) |
| Control System | Fully automatic computer control; manual panel control; LabVIEW-based software |
| Display | Real-time LCD |
| Cooling System | Automatic closed-loop water cooling (interlock protected, automatic on/off) |
| Sample Holder Options | 3", 4", 6" wafers; 1 to 15 cm sample attachments |
| Sample Rotation Speed | 2 to 30 rpm (continuously adjustable; panel or PC) |
| Film Homogeneity | Better than 3% across 4-inch sample |
| Sample Heating Range | 50 to 700 °C (PID controlled, ±1 °C) |
| Thickness Monitoring | Dual-channel; 0.1 Å/s precision; 2 QCMs; ion gun optional |
| Gas Inputs | Ar, N₂, O₂, He, CH₄ and others; digital MFM; 0.2 sccm sensitivity; panel or PC |
| Plasma Cleaning Modes | ICP, CCP, DC-RF (adjustable pressure) |
| Valve Configuration | Throttle, vent, and isolation valves |
| Cycle Time | ~1.5 hours (4 to 6 experiments per day) |
| Warranty | 2 years (materials, design, and workmanship) |
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