{"product_id":"reactive-ion-etching-rie-system","title":"Reactive Ion Etching (RIE) System","description":"\u003ch2\u003eReactive Ion Etching (RIE) System – ToronRIE™ 300\u003c\/h2\u003e\n\u003cp\u003eThe ToronRIE™ 300 is a parallel-plate plasma dry etching platform designed for semiconductor and MEMS device fabrication. Its stainless steel cylindrical chamber accommodates substrates up to 3 inches. A 300 W RF power supply with fully automatic impedance matching generates plasma between the parallel electrodes, producing reactive ions that etch materials with high selectivity and uniformity. A DC bias voltage readout provides real-time process monitoring. The PLC-controlled system includes a graphical HMI interface and supports both manual and fully automatic etching modes.\u003c\/p\u003e\n\u003cp\u003eA water-chilled sample holder with mechanical clamping keeps the substrate at a steady temperature and securely in position throughout the etch. The sample-to-electrode distance is adjustable, so operators can tune etch parameters for different process chemistries and substrate configurations. Process pressure is controlled independently of gas flow, and the automatic fast-acting pressure regulation responds to changing process conditions without interrupting the etch. The standard pump configuration reaches a base pressure of 5×10⁻² mbar, which meets the vacuum requirements of reactive ion etching processes.\u003c\/p\u003e\n\u003cp\u003eThe system etches Si, SiO₂, Si₃N₄, poly-Si, and selected metals. It also supports organic processes, including photoresist descumming, stripping, and polymeric film patterning. An optimized reaction chamber and electrode geometry deliver high etch rate uniformity across the substrate. With a compact W60×D95 cm footprint and a clean-room-compatible design, the system fits semiconductor laboratories and MEMS fabrication environments. A dry pump option is offered for oil-free vacuum system configurations.\u003c\/p\u003e\n\u003ch2\u003eReactive Ion Etching (RIE) System – ToronRIE™ 300 Applications\u003c\/h2\u003e\n\u003cp\u003eThe ToronRIE™ 300 reactive ion etching system supports semiconductor device fabrication, MEMS research, and academic thin film laboratories that need plasma dry etching with anisotropic etch profiles and high material selectivity. Its clean-room-compatible design and PLC automation make it a good fit for research programs as well as small-volume production environments.\u003c\/p\u003e\n\u003ch3\u003eSemiconductor Device Fabrication\u003c\/h3\u003e\n\u003cp\u003eDry etching of Si, SiO₂, Si₃N₄, and poly-Si layers for transistor gate patterning, via formation, and trench definition in semiconductor research and prototyping.\u003c\/p\u003e\n\u003ch3\u003eMEMS Device Fabrication\u003c\/h3\u003e\n\u003cp\u003eAnisotropic etching of silicon and oxide layers to create suspended structures, sensor membranes, and actuator elements in microelectromechanical device research.\u003c\/p\u003e\n\u003ch3\u003ePhotoresist Descumming and Stripping\u003c\/h3\u003e\n\u003cp\u003eOxygen plasma removal of photoresist residues, scum layers, and post-etch organic contamination, with no wet chemical processing required.\u003c\/p\u003e\n\u003ch3\u003ePolymeric Thin Film Etching and Patterning\u003c\/h3\u003e\n\u003cp\u003ePlasma etching of polymer films, organic device layers, and coatings for printed electronics, biosensor, and flexible device applications.\u003c\/p\u003e\n\u003ch3\u003eSurface Activation and Wettability Modification\u003c\/h3\u003e\n\u003cp\u003ePlasma treatment of substrate surfaces to improve adhesion, wettability, or surface energy ahead of subsequent coating or bonding steps.\u003c\/p\u003e\n\u003ch3\u003eAcademic and University Cleanroom Research\u003c\/h3\u003e\n\u003cp\u003eA compact RIE platform for thin film materials research, device prototyping, and cleanroom teaching environments.\u003c\/p\u003e\n\u003ch2\u003eReactive Ion Etching (RIE) System – ToronRIE™ 300 Key Features\u003c\/h2\u003e\n\u003cp\u003eThe ToronRIE™ 300 reactive ion etching system combines a 300 W RF plasma source, water-chilled electrode, automatic impedance matching, independent pressure control, and PLC automation in a compact, clean-room-compatible dry etch platform for semiconductor and MEMS research.\u003c\/p\u003e\n\u003ch3\u003eUp to 3-Inch Wafer and Substrate Processing\u003c\/h3\u003e\n\u003cp\u003eThe system handles wafers and substrate pieces up to 3 inches, covering standard research wafer sizes for semiconductor and MEMS applications.\u003c\/p\u003e\n\u003ch3\u003e300 W RF Power Supply\u003c\/h3\u003e\n\u003cp\u003eA high-power RF source covers the full range of etch rates and plasma conditions required by the system's supported process chemistries.\u003c\/p\u003e\n\u003ch3\u003eFully Automatic Impedance Matching\u003c\/h3\u003e\n\u003cp\u003eAn automatic matching network optimizes power transfer between the RF generator and the plasma load, keeping conditions stable as pressures and gas chemistries change.\u003c\/p\u003e\n\u003ch3\u003eDC Bias Voltage Readout\u003c\/h3\u003e\n\u003cp\u003eA real-time display of self-bias voltage gives a continuous indication of ion energy at the substrate surface throughout the etch.\u003c\/p\u003e\n\u003ch3\u003eWater-Chilled Sample Holder\u003c\/h3\u003e\n\u003cp\u003eActive electrode cooling removes the heat generated by ion bombardment, protecting photoresist masks and temperature-sensitive samples from thermal damage during extended etch cycles.\u003c\/p\u003e\n\u003ch3\u003eMechanical Sample Clamping\u003c\/h3\u003e\n\u003cp\u003ePositive mechanical clamping holds wafers and substrate pieces firmly in place, preserving stable positioning and thermal contact with the chilled electrode surface.\u003c\/p\u003e\n\u003ch3\u003eAdjustable Sample-to-Electrode Distance\u003c\/h3\u003e\n\u003cp\u003eA variable electrode gap allows etch rate, uniformity, and ion energy distribution to be tuned for different process chemistries and substrate geometries.\u003c\/p\u003e\n\u003ch3\u003eAutomatic Fast-Acting Pressure Control\u003c\/h3\u003e\n\u003cp\u003eFast-response pressure regulation keeps etch conditions stable through changes in gas consumption and during process transitions.\u003c\/p\u003e\n\u003ch3\u003eProcess Pressure Control Independent from Gas Flow\u003c\/h3\u003e\n\u003cp\u003eDecoupled pressure and flow control lets operators adjust each parameter separately, widening the accessible process window.\u003c\/p\u003e\n\u003ch3\u003e5×10⁻² mbar Base Pressure\u003c\/h3\u003e\n\u003cp\u003eThe achievable base pressure meets the vacuum requirements for RIE plasma generation and limits surface contamination on the substrate before etching begins.\u003c\/p\u003e\n\u003ch3\u003eHigh Etch Rate Uniformity\u003c\/h3\u003e\n\u003cp\u003eAn optimized reaction chamber and electrode geometry deliver uniform etch rates across the substrate area, as confirmed by etch uniformity mapping data.\u003c\/p\u003e\n\u003ch3\u003eHigh Selectivity Between Materials\u003c\/h3\u003e\n\u003cp\u003ePlasma chemistry and RF parameters can be tuned to achieve high etch selectivity between the target material and the mask or underlying layers.\u003c\/p\u003e\n\u003ch3\u003eStainless Steel Cylindrical Chamber\u003c\/h3\u003e\n\u003cp\u003eStainless steel construction creates a durable, corrosion-resistant process environment compatible with oxygen and other non-corrosive plasma chemistries.\u003c\/p\u003e\n\u003ch3\u003ePLC Control with Graphical HMI Interface\u003c\/h3\u003e\n\u003cp\u003ePLC-based automation paired with an intuitive graphical HMI supports both manual and fully automatic etching operation.\u003c\/p\u003e\n\u003ch3\u003eFast Process Cycles\u003c\/h3\u003e\n\u003cp\u003eRapid pump-down and quick process setup shorten the time between successive etch runs, improving laboratory throughput.\u003c\/p\u003e\n\u003ch3\u003eDry Pump Option\u003c\/h3\u003e\n\u003cp\u003eAn oil-free vacuum pumping option removes the risk of hydrocarbon backstreaming, making it well suited to cleanroom and contamination-sensitive applications.\u003c\/p\u003e\n\u003ch3\u003eW60×D95 cm Compact Footprint\u003c\/h3\u003e\n\u003cp\u003eThe small floor footprint allows installation in standard laboratory and cleanroom spaces without dedicated bay infrastructure.\u003c\/p\u003e\n\u003ch3\u003eClean Room Compatible\u003c\/h3\u003e\n\u003cp\u003eThe system design meets the requirements for installation and operation in semiconductor and MEMS cleanroom environments.\u003c\/p\u003e\n\u003ch2\u003eReactive Ion Etching (RIE) System – ToronRIE™ 300 Theory and Method\u003c\/h2\u003e\n\u003ch3\u003ePrinciple of Reactive Ion Etching\u003c\/h3\u003e\n\u003cp\u003eReactive ion etching removes material from a substrate through a combination of chemical reaction and directional ion bombardment. At low pressure, an RF electric field creates a plasma between parallel electrodes, generating reactive species that include ions, radicals, and neutrals. These species attack the substrate chemically through surface reactions and physically through directional ion impact, which yields anisotropic etch profiles. Because it blends chemical and physical mechanisms, RIE offers greater selectivity and profile control than purely chemical wet etching.\u003c\/p\u003e\n\u003ch3\u003eRF Plasma Generation and Ion Energy Control\u003c\/h3\u003e\n\u003cp\u003eThe 300 W RF supply applies voltage across the parallel electrodes at 13.56 MHz to sustain the plasma between them. The substrate electrode is electrically isolated from the chamber and self-biases negative relative to the plasma potential, which accelerates positive ions toward the substrate with controlled directionality. A DC bias voltage readout lets the operator monitor ion energy continuously during processing. Fully automatic impedance matching maximizes power transfer between the RF generator and the plasma load, keeping conditions stable for the duration of the etch.\u003c\/p\u003e\n\u003ch3\u003ePressure Control and Process Flexibility\u003c\/h3\u003e\n\u003cp\u003eProcess pressure is regulated independently of gas flow rate, and automatic fast-acting pressure control maintains stable etch conditions throughout the process. This separation lets the operator adjust pressure and gas composition individually, widening the parameter space available for different material systems. The system is designed for non-corrosive chemistry processes, making it well suited to oxygen-based photoresist stripping, polymeric film patterning, and surface modification without the need for aggressive halogen gas infrastructure. Water cooling of the sample holder carries away the heat deposited by ion bombardment during sustained etch cycles.\u003c\/p\u003e\n\u003ch2\u003eReactive Ion Etching (RIE) System - ToronRIE™ 300 Technical Specifications\u003c\/h2\u003e\n\u003ctable class=\"table\" border=\"1\" cellspacing=\"0\" cellpadding=\"0\" width=\"610\"\u003e\n\u003cthead\u003e\n\u003ctr\u003e\n\u003cth\u003eParameter\u003c\/th\u003e\n\u003cth\u003eSpecification\u003c\/th\u003e\n\u003c\/tr\u003e\n\u003c\/thead\u003e\n\u003ctbody\u003e\n\u003ctr\u003e\n\u003ctd\u003eSubstrate Size\u003c\/td\u003e\n\u003ctd\u003eUp to 3-inch wafer and substrate pieces\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eRF Power Supply\u003c\/td\u003e\n\u003ctd\u003e300 W\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eRF Frequency\u003c\/td\u003e\n\u003ctd\u003e13.56 MHz\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eImpedance Matching\u003c\/td\u003e\n\u003ctd\u003eFully automatic\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eDC Bias\u003c\/td\u003e\n\u003ctd\u003eSelf-bias voltage (continuously measured and displayed)\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eBase Pressure\u003c\/td\u003e\n\u003ctd\u003e5×10⁻² mbar\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003ePressure Control\u003c\/td\u003e\n\u003ctd\u003eAutomatic, fast-acting; independent from gas flow\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eChamber Construction\u003c\/td\u003e\n\u003ctd\u003eStainless steel, cylindrical\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eSample Holder\u003c\/td\u003e\n\u003ctd\u003eWater-chilled\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eSample Clamping\u003c\/td\u003e\n\u003ctd\u003eMechanical\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eElectrode Gap\u003c\/td\u003e\n\u003ctd\u003eAdjustable\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eControl System\u003c\/td\u003e\n\u003ctd\u003ePLC with graphical HMI interface\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eOperating Modes\u003c\/td\u003e\n\u003ctd\u003eManual and fully automatic\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eVacuum Pump\u003c\/td\u003e\n\u003ctd\u003eStandard configuration; dry pump option available\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eCompatible Chemistries\u003c\/td\u003e\n\u003ctd\u003eNon-corrosive processes (O₂, Ar, N₂, and similar)\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eMaterial Applications\u003c\/td\u003e\n\u003ctd\u003eSi, SiO₂, Si₃N₄, poly-Si, selected metals, photoresist, polymeric films\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eFootprint\u003c\/td\u003e\n\u003ctd\u003eW60 × D95 cm\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eClean Room Compatible\u003c\/td\u003e\n\u003ctd\u003eYes\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003c\/tbody\u003e\n\u003c\/table\u003e","brand":"Torontech","offers":[{"title":"Default Title","offer_id":51280340582639,"sku":null,"price":100.0,"currency_code":"CAD","in_stock":true}],"thumbnail_url":"\/\/cdn.shopify.com\/s\/files\/1\/0710\/5291\/9023\/files\/reactive-ion-etching-rie-system9.webp?v=1793011836","url":"https:\/\/shop.torontech.com\/es\/products\/reactive-ion-etching-rie-system","provider":"Torontech","version":"1.0","type":"link"}