{"product_id":"hipims-system","title":"HiPIMS System","description":"\u003ch2\u003eHiPIMS System: ToronHiPIMS™ 1000\u003c\/h2\u003e\n\u003ch3\u003eHigh-Power Impulse Magnetron Sputtering (HiPIMS) System\u003c\/h3\u003e\n\u003cp\u003eThe ToronHiPIMS™ 1000 is a fully automated high-power impulse magnetron sputtering platform built for research and production thin film deposition where high plasma ionization is essential. Adjustable-width, high-voltage pulses of 300 to 1000 VDC create an ionization density of 70 to 90%. The result is an ionized metal vapor flux that improves film density, adhesion, and conformality. The SS304 chamber, available in prismatic or cylindrical form from 30 to 60 cm, reaches a base pressure of 10⁻⁷ Torr and supports one to four HiPIMS sources. A touch screen and real-time LCD displays manage the automated deposition cycle from start to finish.\u003c\/p\u003e\n\u003ch3\u003ePulsed-DC Cleaning, Synchronization, and Gas Control\u003c\/h3\u003e\n\u003cp\u003eAn optional synchronized Pulsed-DC plasma cleans the substrate surface in situ before deposition. It removes native oxides and contaminants without breaking vacuum. Target-sample synchronization, combined with voltage, current, and timing monitoring, provides precise control over the pulse delivery sequence and helps optimize film structure in HiPIMS processes. Gas inputs regulated by mass flow meters and fitted with isolation valves accommodate Ar, N₂, and other process gases, enabling reactive HiPIMS deposition of nitrides, oxides, and carbides. An isolation valve lets the chamber hold vacuum between runs, which trims cycle-time overhead.\u003c\/p\u003e\n\u003ch3\u003eSubstrate Heating, Rotation, and Thickness Monitoring\u003c\/h3\u003e\n\u003cp\u003eSubstrate temperature is PID controlled from 50 to 600 °C, while rotation from 2 to 30 rpm promotes uniform film deposition across the substrate surface. A dual-channel controller supporting 1 to 4 QCMs tracks film thickness and deposition rate in real time at 0.1 Å\/s, with averaged output across the sensors. Internal lighting is included, along with 120 °C baking capability for chamber conditioning and moisture removal before deposition. With a 75×120 cm footprint and lockable wheels, the system passes through standard 85 cm doorways.\u003c\/p\u003e\n\u003ch2\u003eHiPIMS System: ToronHiPIMS™ 1000 Applications\u003c\/h2\u003e\n\u003ch3\u003eWhere the HiPIMS System Delivers Results\u003c\/h3\u003e\n\u003cp\u003eThe ToronHiPIMS™ 1000 serves thin film deposition work in which conventional magnetron sputtering cannot reach the density, adhesion, and conformality that advanced coatings and devices demand. A high ionization fraction, reactive gas capability, and target-sample synchronization make the system suitable for a wide range of materials and substrate geometries.\u003c\/p\u003e\n\u003ch3\u003eKey Application Areas\u003c\/h3\u003e\n\u003cul\u003e\n\u003cli\u003e\n\u003cstrong\u003eHard Coating and Wear-Resistant Film Deposition:\u003c\/strong\u003e HiPIMS deposition of TiN, CrN, TiAlN, DLC, and related hard coatings onto cutting tools, molds, and mechanical components, where high film density and strong adhesion are required.\u003c\/li\u003e\n\u003cli\u003e\n\u003cstrong\u003eOptical Thin Film Research:\u003c\/strong\u003e Reactive HiPIMS deposition of TiO₂, SiO₂, and other optical oxide coatings, with excellent stoichiometry control and low optical scatter.\u003c\/li\u003e\n\u003cli\u003e\n\u003cstrong\u003eSemiconductor and Microelectronics Research:\u003c\/strong\u003e Deposition of barrier layers, contact metals, and functional oxide films on wafer substrates that call for void-free, dense films at controlled substrate temperatures.\u003c\/li\u003e\n\u003cli\u003e\n\u003cstrong\u003eEnergy and Solar Cell Research:\u003c\/strong\u003e Reactive HiPIMS deposition of transparent conductive oxides, nitride absorbers, and functional contact layers for thin-film photovoltaic and energy storage research.\u003c\/li\u003e\n\u003cli\u003e\n\u003cstrong\u003eBiomedical Implant Coating:\u003c\/strong\u003e HiPIMS deposition of biocompatible TiN, DLC, and related coatings onto implant surfaces, where strong adhesion and low defect density at the film-substrate interface matter.\u003c\/li\u003e\n\u003cli\u003e\n\u003cstrong\u003eDiffusion Barrier and Encapsulation Layer Deposition:\u003c\/strong\u003e Deposition of dense, conformal nitride and oxide barrier layers for microelectronic packaging and OLED device encapsulation.\u003c\/li\u003e\n\u003cli\u003e\n\u003cstrong\u003eReactive Nitride and Carbide Film Research:\u003c\/strong\u003e Controlled reactive HiPIMS deposition of transition metal nitrides, carbides, and carbonitrides for materials science and surface engineering research programs.\u003c\/li\u003e\n\u003c\/ul\u003e\n\u003cp\u003e\u003cimg src=\"https:\/\/cdn.shopify.com\/s\/files\/1\/0710\/5291\/9023\/files\/toronhipimstm-1-966267591.webp?v=1793001380\" alt=\"HiPIMS System\"\u003e\u003c\/p\u003e\n\u003ch2\u003eHiPIMS System: ToronHiPIMS™ 1000 Key Features\u003c\/h2\u003e\n\u003ch3\u003eIntegrated High-Vacuum Thin Film Platform\u003c\/h3\u003e\n\u003cp\u003eThe ToronHiPIMS™ 1000 combines high-voltage pulsed magnetron sputtering, PID substrate heating, MFM gas control, synchronized Pulsed-DC surface cleaning, and automated layer-by-layer deposition in a single high-vacuum system.\u003c\/p\u003e\n\u003ch3\u003ePlasma and Sputtering Source Features\u003c\/h3\u003e\n\u003cul\u003e\n\u003cli\u003e\n\u003cstrong\u003e70 to 90% Ionization Density with 300 to 1000 VDC Adjustable Pulses:\u003c\/strong\u003e Very high plasma ionization sets HiPIMS apart from conventional sputtering. It allows controlled ion energy at the substrate surface, which improves film density, adhesion, and conformality.\u003c\/li\u003e\n\u003cli\u003e\n\u003cstrong\u003e1 to 4 Configurable HiPIMS Sputtering Sources:\u003c\/strong\u003e Single-target or multi-target setups support single-material, co-sputtered, or sequenced multi-layer deposition within one vacuum cycle.\u003c\/li\u003e\n\u003cli\u003e\n\u003cstrong\u003eTarget-Sample Synchronization with Voltage-Current-Timing Display:\u003c\/strong\u003e Pulse timing between the target and substrate bias is synchronized, and voltage, current, and timing parameters appear in real time to support process optimization and reproducibility.\u003c\/li\u003e\n\u003cli\u003e\n\u003cstrong\u003eSynchronized Pulsed-DC Plasma Surface Cleaning:\u003c\/strong\u003e In-situ substrate preparation with synchronized plasma removes native oxides and contaminants without breaking vacuum before deposition begins.\u003c\/li\u003e\n\u003c\/ul\u003e\n\u003ch3\u003eControl and Automation\u003c\/h3\u003e\n\u003cul\u003e\n\u003cli\u003e\n\u003cstrong\u003eFully Automatic Computer Control with Touch Screen:\u003c\/strong\u003e A touch screen panel manages all system operations automatically, with real-time LCD status display throughout the deposition process.\u003c\/li\u003e\n\u003cli\u003e\n\u003cstrong\u003eFully Automated Layer-by-Layer Deposition:\u003c\/strong\u003e Automated control handles each layer independently, supporting multi-layer process sequences without manual intervention.\u003c\/li\u003e\n\u003c\/ul\u003e\n\u003ch3\u003eChamber and Vacuum Performance\u003c\/h3\u003e\n\u003cul\u003e\n\u003cli\u003e\n\u003cstrong\u003eSS304 Chamber (30 to 60 cm, Prismatic or Cylindrical):\u003c\/strong\u003e A clean, electro-polished stainless steel chamber is offered in multiple sizes to suit different substrate and load configurations.\u003c\/li\u003e\n\u003cli\u003e\n\u003cstrong\u003eStandard 1-inch, QF, CF, and ISO Feedthrough Ports:\u003c\/strong\u003e Configurable port options allow flexible integration of feedthroughs, gauges, and process access.\u003c\/li\u003e\n\u003cli\u003e\n\u003cstrong\u003eInternal Lighting and 120 °C Baking Capability:\u003c\/strong\u003e Internal lighting enables visual chamber inspection, and the baking option removes moisture and conditions the chamber before high-purity runs.\u003c\/li\u003e\n\u003cli\u003e\n\u003cstrong\u003e10⁻⁷ Torr Base Pressure with Fast Pump-Down:\u003c\/strong\u003e The system reaches 10⁻⁶ Torr in 30 minutes. A turbomolecular and mechanical pump combination is standard, with a cryo-pump and dry pump available as options.\u003c\/li\u003e\n\u003cli\u003e\n\u003cstrong\u003eWide-Range Vacuum Control (1000 to 10⁻⁹ Torr):\u003c\/strong\u003e Integrated vacuum measurement and control covers the full pressure range for both process gas introduction and base vacuum monitoring.\u003c\/li\u003e\n\u003cli\u003e\n\u003cstrong\u003eVacuum Hold Between Runs:\u003c\/strong\u003e An isolation valve keeps the chamber under vacuum when idle, shortening pump-down time between successive experiments.\u003c\/li\u003e\n\u003c\/ul\u003e\n\u003ch3\u003eSubstrate, Gas, and Thickness Control\u003c\/h3\u003e\n\u003cul\u003e\n\u003cli\u003e\n\u003cstrong\u003e50 to 600 °C PID Substrate Heating:\u003c\/strong\u003e PID-controlled substrate temperature across a wide range supports deposition at elevated temperatures for improved film crystallinity and adhesion.\u003c\/li\u003e\n\u003cli\u003e\n\u003cstrong\u003e2 to 30 rpm Adjustable Sample Rotation:\u003c\/strong\u003e Continuously adjustable rotation promotes an even film thickness distribution across the substrate during deposition.\u003c\/li\u003e\n\u003cli\u003e\n\u003cstrong\u003eMFM Controlled Gas Inputs with Isolation Valves:\u003c\/strong\u003e Mass flow meter controlled delivery of Ar, N₂, and other process gases supports both inert and reactive HiPIMS processes, with Ar or N₂ chamber backfill.\u003c\/li\u003e\n\u003cli\u003e\n\u003cstrong\u003e0.1 Å\/s Dual-Channel Thickness Monitoring with 1 to 4 QCMs:\u003c\/strong\u003e Precise deposition rate and cumulative thickness measurement is provided, with averaged-value output across multiple QCM sensors.\u003c\/li\u003e\n\u003c\/ul\u003e\n\u003ch3\u003eCooling, Footprint, and Warranty\u003c\/h3\u003e\n\u003cul\u003e\n\u003cli\u003e\n\u003cstrong\u003eAutomatic Closed-Loop Water Cooling:\u003c\/strong\u003e Active water cooling manages heat from the power supplies, targets, and chamber walls throughout HiPIMS operation.\u003c\/li\u003e\n\u003cli\u003e\n\u003cstrong\u003e75×120 cm Mobile Platform:\u003c\/strong\u003e The 75×120 cm footprint and lockable wheels allow the system to pass through standard 85 cm doorways, offering flexible placement in laboratory and production environments.\u003c\/li\u003e\n\u003cli\u003e\n\u003cstrong\u003eOne-Year Full Warranty:\u003c\/strong\u003e Coverage includes design, materials, and workmanship.\u003c\/li\u003e\n\u003c\/ul\u003e\n\u003ch2\u003eHiPIMS System: ToronHiPIMS™ 1000 Theory and Method\u003c\/h2\u003e\n\u003ch3\u003eHow High-Power Impulse Magnetron Sputtering Works\u003c\/h3\u003e\n\u003cp\u003eHiPIMS delivers extremely high power densities to a magnetron target in short, high-voltage pulses, reaching instantaneous power levels far beyond those of conventional DC or RF sputtering. At peak pulse power, plasma density near the target climbs sharply, and a large fraction of the sputtered metal atoms is ionized before reaching the substrate. These ionized metal species move under the influence of plasma and applied bias fields, which allows control over deposition angle and improves film density on complex substrate geometries. Pulse width, voltage, and repetition rate can each be adjusted independently to suit the material and process.\u003c\/p\u003e\n\u003ch3\u003eIonization Control and Target-Sample Synchronization\u003c\/h3\u003e\n\u003cp\u003eThe 300 to 1000 VDC pulse range, together with adjustable pulse width, sets the ionization fraction for a given target. Ionization densities of 70 to 90% clearly separate HiPIMS from conventional sputtering, where most of the sputtered flux arrives at the substrate as neutral atoms with a broad angular distribution. Target-sample synchronization coordinates the arrival of ionized flux with the applied substrate bias, so ion energy at the growth surface can be controlled independently of the plasma condition. An optional synchronized Pulsed-DC mode applies the same pulse-gating approach to in-situ surface cleaning before deposition.\u003c\/p\u003e\n\u003ch3\u003eReactive Deposition and Vacuum Conditioning\u003c\/h3\u003e\n\u003cp\u003eReactive HiPIMS introduces N₂, O₂, or other reactive gases through MFM-controlled inputs, forming nitride, oxide, or carbide films from pure metal targets. The high ionization fraction lessens the hysteresis effect that limits rate stability in conventional reactive sputtering, which widens the stable process window. An isolation valve preserves chamber vacuum between depositions, and a 120 °C baking option conditions the chamber walls to support a low base pressure. A turbomolecular and mechanical pump combination, with cryo-pump and dry pump options, reaches a base pressure of 10⁻⁷ Torr.\u003c\/p\u003e\n\u003ch2\u003eHiPIMS System - ToronHiPIMS™ 1000 Technical Specifications\u003c\/h2\u003e\n\u003ctable class=\"table\" border=\"1\" cellspacing=\"0\" cellpadding=\"0\" width=\"610\"\u003e\n\u003cthead\u003e\n\u003ctr\u003e\n\u003cth\u003eParameter\u003c\/th\u003e\n\u003cth\u003eSpecification\u003c\/th\u003e\n\u003c\/tr\u003e\n\u003c\/thead\u003e\n\u003ctbody\u003e\n\u003ctr\u003e\n\u003ctd\u003eHiPIMS Pulse Voltage\u003c\/td\u003e\n\u003ctd\u003e300 to 1000 VDC\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eHiPIMS Pulse Width\u003c\/td\u003e\n\u003ctd\u003eAdjustable\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003ePlasma Ionization Density\u003c\/td\u003e\n\u003ctd\u003e70 to 90%\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eNumber of HiPIMS Sources\u003c\/td\u003e\n\u003ctd\u003e1 to 4 (configurable)\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eTarget-Sample Synchronization\u003c\/td\u003e\n\u003ctd\u003eYes; voltage-current-timing display\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003ePlasma Surface Cleaning\u003c\/td\u003e\n\u003ctd\u003eSynchronized Pulsed-DC plasma\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eGas Inputs\u003c\/td\u003e\n\u003ctd\u003eAr, N₂, and others; MFM controlled; isolation valves; Ar or N₂ backfill\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eChamber Material\u003c\/td\u003e\n\u003ctd\u003eSS304 (prismatic or cylindrical)\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eChamber Sizes\u003c\/td\u003e\n\u003ctd\u003e30\/40\/50\/60 cm box size\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eChamber Surface Finish\u003c\/td\u003e\n\u003ctd\u003eElectro-polished\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eFeedthrough Ports\u003c\/td\u003e\n\u003ctd\u003eStandard 1-inch, QF, CF, ISO\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eInternal Lighting\u003c\/td\u003e\n\u003ctd\u003eYes\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eBaking Capability\u003c\/td\u003e\n\u003ctd\u003eUp to 120 °C (internal)\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eBase Pressure\u003c\/td\u003e\n\u003ctd\u003e10⁻⁷ Torr\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eWorking Vacuum Level (Pump-Down Time)\u003c\/td\u003e\n\u003ctd\u003e10⁻⁶ Torr in 30 minutes\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eVacuum Control Range\u003c\/td\u003e\n\u003ctd\u003e1000 to 10⁻⁹ Torr\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003ePump Configuration\u003c\/td\u003e\n\u003ctd\u003eTurbomolecular + Mechanical (cryo-pump and dry pump as options)\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eSample Heating Range\u003c\/td\u003e\n\u003ctd\u003e50 to 600 °C (PID controlled)\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eSample Rotation Speed\u003c\/td\u003e\n\u003ctd\u003e2 to 30 rpm\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eThickness Monitoring\u003c\/td\u003e\n\u003ctd\u003eDual-channel; 0.1 Å\/s precision; 1 to 4 QCMs; averaged value\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eCooling System\u003c\/td\u003e\n\u003ctd\u003eAutomatic closed-loop water cooling\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eControl System\u003c\/td\u003e\n\u003ctd\u003eFully automatic computer control; touch screen panel; real-time LCD\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eFootprint\u003c\/td\u003e\n\u003ctd\u003e75 × 120 cm\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eDoor Clearance\u003c\/td\u003e\n\u003ctd\u003ePasses through standard 85 cm doorway\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eMobility\u003c\/td\u003e\n\u003ctd\u003eLockable wheels\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eWarranty\u003c\/td\u003e\n\u003ctd\u003e1 year (design, materials, and workmanship)\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003c\/tbody\u003e\n\u003c\/table\u003e","brand":"Torontech","offers":[{"title":"Default Title","offer_id":51279385264367,"sku":null,"price":100.0,"currency_code":"CAD","in_stock":true}],"thumbnail_url":"\/\/cdn.shopify.com\/s\/files\/1\/0710\/5291\/9023\/files\/hipims-system363448829.webp?v=1793001395","url":"https:\/\/shop.torontech.com\/es\/products\/hipims-system","provider":"Torontech","version":"1.0","type":"link"}